Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMS86310MOSFET N-CH 80V 17A/50A 8PQFN |
2272 | 2.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17A (Ta), 50A (Tc) | 8V, 10V | 4.8mOhm @ 17A, 10V | 4.5V @ 250µA | 95 nC @ 10 V | ±20V | 6290 pF @ 40 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STS7NF60LMOSFET N-CH 60V 7.5A 8SO |
3148 | 2.33 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.5A (Tc) | 5V, 10V | 19.5mOhm @ 3.5A, 10V | 1V @ 250µA | 34 nC @ 4.5 V | ±16V | 1700 pF @ 25 V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPD06N80C3ATMA1MOSFET N-CH 800V 6A TO252-3 |
2920 | 2.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC500N20NS3GATMA1MOSFET N-CH 200V 24A TDSON-8 |
3159 | 2.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 50mOhm @ 22A, 10V | 4V @ 60µA | 15 nC @ 10 V | ±20V | 1580 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR668DP-T1-RE3MOSFET N-CH 100V 95A PPAK SO-8 |
3032 | 2.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 95A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 3.4V @ 250µA | 83 nC @ 7.5 V | ±20V | 5400 pF @ 50 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQB27P06TMMOSFET P-CH 60V 27A D2PAK |
3684 | 2.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±25V | 1400 pF @ 25 V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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CSD18509Q5BMOSFET N-CH 40V 100A 8VSON |
3326 | 2.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 1.2mOhm @ 32A, 10V | 2.2V @ 250µA | 195 nC @ 10 V | ±20V | 13900 pF @ 20 V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB029N06N3GATMA1MOSFET N-CH 60V 120A D2PAK |
3577 | 2.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SPD15P10PLGBTMA1MOSFET P-CH 100V 15A TO252-3 |
3908 | 2.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD082N10N3GATMA1MOSFET N-CH 100V 80A TO252-3 |
2810 | 2.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 8.2mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10 V | ±20V | 3980 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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ISC060N10NM6ATMA1TRENCH >=100V PG-TDSON-8 |
2326 | 2.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta), 97A (Tc) | 8V, 10V | 6mOhm @ 25A, 10V | 3.3V @ 50µA | 33 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TPN3R704PL,L1QMOSFET N-CH 40V 80A 8TSON |
3198 | 0.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 630mW (Ta), 86W (Tc) | 175°C | Surface Mount |
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Таблицы данных |
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AUIRLR3410TRLMOSFET N-CH 100V 17A DPAK |
3012 | 2.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IAUC120N04S6L009ATMA1MOSFET N-CH 40V 150A TDSON-8-34 |
3466 | 2.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™-6 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 960mOhm @ 60A, 10V | 2V @ 90µA | 128 nC @ 10 V | ±16V | 7806 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7461DP-T1-E3MOSFET P-CH 60V 8.6A PPAK SO-8 |
2295 | 2.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.6A (Ta) | 4.5V, 10V | 14.5mOhm @ 14.4A, 10V | 3V @ 250µA | 190 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7461DP-T1-GE3MOSFET P-CH 60V 8.6A PPAK SO-8 |
3075 | 2.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.6A (Ta) | 4.5V, 10V | 14.5mOhm @ 14.4A, 10V | 3V @ 250µA | 190 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DN2625K4-GMOSFET N-CH 250V 1.1A TO252 |
2493 | 1.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 1.1A (Tj) | 0V | 3.5Ohm @ 1A, 0V | - | 7.04 nC @ 1.5 V | ±20V | 1000 pF @ 25 V | Depletion Mode | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ412EP-T1_GE3MOSFET N-CH 40V 32A PPAK SO-8 |
3237 | 2.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 32A (Tc) | 4.5V, 10V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250µA | 120 nC @ 10 V | ±20V | 5950 pF @ 20 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR3710ZTRPBFMOSFET N-CH 100V 42A DPAK |
2705 | 2.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 2930 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR3710ZTRLPBFMOSFET N-CH 100V 42A DPAK |
3817 | 2.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 2930 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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