Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NTLJS3180PZTBGSMALL SIGNAL FIELD-EFFECT TRANSI |
3000 | 0.19 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 1.5V, 4.5V | 38mOhm @ 3A, 4.5V | 1V @ 250µA | 19.5 nC @ 4.5 V | ±8V | 1100 pF @ 16 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ646-TL-E2SJ646 - P-CHANNEL SILICON MOSFE |
8400 | 0.20 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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N0300P-T1B-ATSIGNAL DEVICE |
3000 | 0.20 |
ДобавитьРасследования |
Bulk | - | Obsolete | - | - | - | 4.5A (Tj) | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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MMDF4N01HDR2TRANS MOSFET N-CH 20V 5.2A 8-PIN |
2746 | 0.20 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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2SJ646-TL-E2SJ646 - P-CHANNEL SILICON MOSFE |
2600 | 0.20 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
HAT1096C-EL-EHAT1096C - P-CHANNEL POWER MOSFE |
9000 | 0.21 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 2.5V, 4.5V | 293mOhm @ 500µA, 4.5V | 1.4V @ 1mA | 2 nC @ 4.5 V | ±12V | 155 pF @ 10 V | - | 790mW (Ta) | 150°C | Surface Mount |
| |
|
NTMFS4C13NBT1GNTMFS4C13N - MOSFET SO8FL 30V 38 |
6286 | 0.21 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta), 38A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2.1V @ 250µA | 15.2 nC @ 10 V | ±20V | 770 pF @ 15 V | - | 750mW (Ta), 21.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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ECH8662-TL-HECH8662 - MOSFET 2 N-CHANNEL ARR |
3000 | 0.21 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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PH2525L,115NEXPERIA PH2525L - 100A, 25V, 0. |
7200 | 0.22 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | 2.15V @ 1mA | 34.7 nC @ 4.5 V | ±20V | 4470 pF @ 12 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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HAT2203C-EL-EHAT2203C-EL-E - SILICON N CHANNE |
9000 | 0.23 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 90mOhm @ 1A, 4.5V | 1.4V @ 1mA | 1.8 nC @ 4.5 V | ±12V | 165 pF @ 10 V | - | 830mW (Ta) | 150°C | Surface Mount |
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Таблицы данных |
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FDMS0312SPOWER FIELD-EFFECT TRANSISTOR, 1 |
3814 | 0.23 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 18A, 10V | 3V @ 1mA | 46 nC @ 10 V | ±20V | 2820 pF @ 15 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDG6313NSMALL SIGNAL FIELD-EFFECT TRANSI |
3000 | 0.23 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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PSMN6R0-25YLD115NEXPERIA PSMN6R0-25YLD - POWER F |
9000 | 0.24 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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SFU9014TU5.3A, 60V, 0.5OHM, P-CHANNEL MOS |
6260 | 0.24 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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2SJ670-TD-E2SJ670 - P-CHANNEL SILICON MOSFE |
3361 | 0.24 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
BUK7225-55A,118N-CHANNEL TRENCHMOS STANDARD LEV |
9604 | 0.25 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 43A (Ta) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1310 pF @ 25 V | - | 94W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS0355SPOWER FIELD-EFFECT TRANSISTOR |
6000 | 0.25 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 22A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 1mA | 31 nC @ 10 V | ±20V | 1815 pF @ 15 V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH7914TRPBFIRFH7914 - 12V-300V N-CHANNEL PO |
3375 | 0.25 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1160 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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PJS6403_S1_0000130V P-CHANNEL ENHANCEMENT MODE M |
930 | 0.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 4.5V, 10V | 32mOhm @ 4A, 10V | 2.5V @ 250µA | 7.8 nC @ 4.5 V | ±20V | 870 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS123IXTSA1SMALL SIGNAL MOSFETS PG-SOT23-3 |
506 | 0.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.63 nC @ 10 V | ±20V | 15 pF @ 50 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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