Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MTAJ50N05HDLFKNFET T0220FP JPN |
935 | 1.80 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFD320MOSFET N-CH 400V 490MA 4HVMDIP |
812 | 1.80 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 490mA (Ta) | - | 1.8Ohm @ 210mA, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2SK1459LSN-CHANNEL SILICON MOSFET |
1308 | 1.82 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BTS130-E3045AN-CHANNEL POWER MOSFET |
814 | 1.82 |
ДобавитьРасследования |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFP352N-CHANNEL POWER MOSFET |
436 | 1.82 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 400mOhm @ 8.9A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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ISL9N302AS3MOSFET N-CH 30V 75A TO-262AA |
400 | 1.82 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 2.3mOhm @ 75A, 10V | 3V @ 250µA | 300 nC @ 10 V | ±20V | 11000 pF @ 15 V | - | 345W (Tc) | - | Through Hole |
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Таблицы данных |
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NP80N04PDG-E1B-AYMOSFET N-CH 40V 80A TO263-3 |
1000 | 1.84 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NP80N04NLG-S18-AYMOSFET N-CH 40V 80A TO262 |
750 | 1.84 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole |
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2SK972-94-EN-CHANNEL POWER MOSFET |
537 | 1.84 |
ДобавитьРасследования |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NP80N04NDG-S18-AYMOSFET N-CH 40V 80A TO262 |
400 | 1.84 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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NP80N03MLE-S18-AYMOSFET N-CH 30V 80A TO220 |
300 | 1.84 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | - | 7mOhm @ 40A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | - | 3900 pF @ 25 V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPI65R190CN-CHANNEL POWER MOSFET |
500 | 1.85 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2SJ245L-EP-CHANNEL POWER MOSFET |
242 | 1.86 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXTJ4N150MOSFET N-CH 1500V 2.5A TO247 |
3767 | 11.67 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2.5A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH86N30TMOSFET N-CH 300V 86A TO247AD |
2638 | 11.84 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 86A (Tc) | 10V | 43mOhm @ 43A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 11300 pF @ 25 V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2SK2485-APOWER FIELD-EFFECT TRANSISTOR |
368 | 4.52 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJK60S4DPE-WS#J3N-CHANNEL POWER MOSFET |
320 | 4.53 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FS25SM-9A#B10N-CHANNEL POWER MOSFET |
692 | 4.68 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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MSCSM120DAM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
3495 | 125.80 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | Chassis Mount |
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IXFN90N170SKSICFET N-CH 1700V 90A SOT227B |
2661 | 347.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 90A (Tc) | 20V | 35mOhm @ 100A, 20V | 4V @ 36mA | 376 nC @ 20 V | +20V, -5V | 7340 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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