Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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R6009ENXC7G600V 9A TO-220FM, LOW-NOISE POWE |
1000 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23 nC @ 10 V | ±20V | 430 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6509ENXC7G650V 9A TO-220FM, LOW-NOISE POWE |
1000 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Ta) | 10V | 585mOhm @ 2.8A, 10V | 4V @ 230µA | 24 nC @ 10 V | ±20V | 430 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6009KNXC7G600V 9A TO-220FM, HIGH-SPEED SWI |
1000 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 535mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5 nC @ 10 V | ±20V | 540 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFZ44RPBF-BE3MOSFET N-CH 60V 50A TO220AB |
966 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF76445S3STMOSFET N-CH 60V 75A D2PAK |
385 | 1.40 |
ДобавитьРасследования |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 6.5mOhm @ 75A, 10V | 3V @ 250µA | 150 nC @ 10 V | ±16V | 4965 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TK190E65Z,S1X650V DTMOS VI TO-220 190MOHM |
200 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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HUF75343S3_NLN-CHANNEL POWER MOSFET |
360 | 1.40 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDI8442MOSFET N-CH 40V 23A/80A I2PAK |
6546 | 1.41 |
ДобавитьРасследования |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75639S3MOSFET N-CH 100V 56A I2PAK |
5937 | 1.41 |
ДобавитьРасследования |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDP5690MOSFET N-CH 60V 32A TO220-3 |
5075 | 1.41 |
ДобавитьРасследования |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 6V, 10V | 27mOhm @ 16A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±20V | 1120 pF @ 25 V | - | 58W (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF18N50V2SDTUN-CHANNEL POWER MOSFET |
4950 | 1.41 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tj) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 55 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2SK2329L-EN-CHANNEL POWER MOSFET |
4294 | 1.41 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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NTB12N50T4N-CHANNEL POWER MOSFET |
3989 | 1.41 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FQI47P06TUMOSFET P-CH 60V 47A I2PAK |
3979 | 1.41 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 47A (Tc) | 10V | 26mOhm @ 23.5A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3600 pF @ 25 V | - | 3.75W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDW264PMOSFET P-CH 20V 9.7A 8TSSOP |
1494 | 1.41 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.7A (Ta) | 2.5V, 4.5V | 10mOhm @ 9.7A, 4.5V | 1.5V @ 250µA | 135 nC @ 5 V | ±12V | 7225 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP040N06NF2SAKMA1MOSFET N-CH |
961 | 1.41 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.3V @ 50µA | 44 nC @ 10 V | ±20V | 3375 pF @ 30 V | - | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQB46N15TMN-CHANNEL POWER MOSFET |
570 | 1.41 |
ДобавитьРасследования |
Bulk | QFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 45.6A (Tc) | 10V | 42mOhm @ 22.8A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3250 pF @ 25 V | - | 3.75W (Ta), 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA4N65X2MOSFET N-CH 650V 4A TO263 |
3744 | 2.98 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3 nC @ 10 V | ±30V | 455 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R280C6650 V COOLMOS E6 POWER MOSFET |
950 | 1.42 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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STFW2N105K5MOSFET N-CH 1050V 2A ISOWATT |
775 | 3.00 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 1050 V | 2A (Tc) | 10V | 8Ohm @ 750mA, 10V | 5V @ 100µA | 10 nC @ 10 V | 30V | 115 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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