Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IRFBG20PBF-BE3MOSFET N-CH 1000V 1.4A TO220AB |
902 | 1.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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VN0550N3-GMOSFET N-CH 500V 50MA TO92-3 |
369 | 1.93 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCP600N60ZMOSFET N-CH 600V 7.4A TO220-3 |
372 | 1.93 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26 nC @ 10 V | ±20V | 1120 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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CSD18510Q5BTMOSFET N-CH 40V 300A 8VSON |
319 | 2.87 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 0.96mOhm @ 32A, 10V | 2.3V @ 250µA | 153 nC @ 10 V | ±20V | 11400 pF @ 20 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP12N50E-GE3MOSFET N-CH 500V 10.5A TO220AB |
998 | 1.95 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 886 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD320PBFMOSFET N-CH 400V 490MA 4DIP |
484 | 1.95 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 490mA (Ta) | 10V | 1.8Ohm @ 210mA, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP5N80K5MOSFET N-CH 800V 4A TO220 |
760 | 1.96 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5 nC @ 10 V | ±30V | 177 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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CSD18503KCSMOSFET N-CH 40V 100A TO220-3 |
157 | 1.96 |
ДобавитьРасследования |
Tube | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 2.3V @ 250µA | 36 nC @ 10 V | ±20V | 3150 pF @ 20 V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF9P25MOSFET P-CH 250V 6A TO220F-3 |
320 | 1.97 |
ДобавитьРасследования |
Tube | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 620mOhm @ 3A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R600P7XKSA1MOSFET N-CH 650V 6A TO220-3 |
118 | 2.01 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK10A50W,S5XX35 PB-F POWER MOSFET TRANSISTOR |
152 | 2.01 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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IRF9610SPBFMOSFET P-CH 200V 1.8A D2PAK |
978 | 2.04 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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VN4012L-GMOSFET N-CH 400V 160MA TO92-3 |
804 | 2.08 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF9Z24SPBFMOSFET P-CH 60V 11A D2PAK |
180 | 2.09 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF12N50NZMOSFET N-CH 500V 11.5A TO220F |
185 | 2.10 |
ДобавитьРасследования |
Tube | UniFET-II™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD7N60E-GE3MOSFET N-CH 600V 7A DPAK |
169 | 2.10 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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VP2450N3-GMOSFET P-CH 500V 100MA TO92-3 |
328 | 2.12 |
ДобавитьРасследования |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 100mA (Tj) | 4.5V, 10V | 30Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP11N80AE-GE3MOSFET N-CH 800V 8A TO220AB |
921 | 2.12 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTP6412ANGMOSFET N-CH 100V 58A TO220AB |
2577 | 2.13 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AOT7S65LMOSFET N-CH 650V 7A TO220 |
401 | 2.14 |
ДобавитьРасследования |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | ±30V | 434 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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