Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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SUP40012EL-GE3MOSFET N-CH 40V 150A TO220AB |
608 | 2.45 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.79mOhm @ 30A, 10V | 2.5V @ 250µA | 195 nC @ 10 V | ±20V | 10930 pF @ 20 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STE48NM50MOSFET N-CH 550V 48A ISOTOP |
2476 | 30.54 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 5V @ 250µA | 117 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTX210P10TMOSFET P-CH 100V 210A PLUS247-3 |
3308 | 30.63 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF190N60MOSFET N-CH 600V 20.2A TO220F |
845 | 3.17 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN82N60PMOSFET N-CH 600V 72A SOT-227B |
3521 | 38.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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NTH4L015N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
2348 | 40.96 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 142A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT3040KLGC11SICFET N-CH 1200V 55A TO247N |
1350 | 41.63 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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MSC025SMA120B4TRANS SJT N-CH 1200V 103A TO247 |
2025 | 44.14 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3020 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFZ520N075T2MOSFET N-CH 75V 465A DE475 |
2675 | 44.93 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 465A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SCTW70N120G2VTRANS SJT N-CH 1200V 91A HIP247 |
152 | 48.36 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 91A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 547W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN56N90PMOSFET N-CH 900V 56A SOT-227B |
2783 | 57.80 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 56A (Tc) | 10V | 135mOhm @ 28A, 10V | 6.5V @ 3mA | 375 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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G3R12MT12K1200V 12M TO-247-4 G3R SIC MOSFE |
3772 | 69.18 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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MSC70SM120JCU2SICFET N-CH 1.2KV 89A SOT227 |
2335 | 69.81 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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GP2T080A120USIC MOSFET 1200V 80M TO-247-3L |
3046 | 12.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP |
2663 | 101.20 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC130SM120JCU3SICFET N-CH 1.2KV 173A SOT227 |
3996 | 107.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC130SM120JCU2SICFET N-CH 1.2KV 173A SOT227 |
2379 | 107.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT12040JVRMOSFET N-CH 1200V 26A SOT227 |
2185 | 114.65 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTX5N250MOSFET N-CH 2500V 5A PLUS247-3 |
2627 | 124.59 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200 nC @ 10 V | ±30V | 8560 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB9NK50ZT4MOSFET N-CH 500V 7.2A D2PAK |
1000 | 1.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.2A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4.5V @ 100µA | 32 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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