Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BSS84PWH6327XTSA1BSS84 - SMALL SIGNAL FIELD-EFFEC |
2696 | 0.00 |
ДобавитьРасследования |
Bulk | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 150mA (Ta) | 4.5V, 10V | 8Ohm @ 150mA, 10V | 2V @ 20µA | 1.5 nC @ 10 V | ±20V | 19.1 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS4C09NBT1GNTMFS4C09 - NFET SO8FL 30V 52A 5 |
2221 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | - | - | - | - | - | - | 1252 pF @ 15 V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPG20N06S4L11ATMA1IPG20N06 - 55V-60V N-CHANNEL AUT |
3015 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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PMV160UP235PMV160 - N-CHANNEL MOSFET |
2414 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FDMS8558SDCPOWER FIELD-EFFECT TRANSISTOR, 3 |
3025 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IRFP1405PBFIRFP1405 - 12V-300V N-CHANNEL PO |
3882 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPT60R102G7XTMA2IPT60R102 - 600V COOLMOS N-CHANN |
2334 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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PF5102PF5102 - N-CHANNEL LOW-FREQUENCY |
2024 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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BUK7Y59-60EXNEXPERIA BUK7Y59 - N-CHANNEL MOS |
3119 | 0.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 59mOhm @ 5A, 10V | 4V @ 1mA | 7.8 nC @ 10 V | ±20V | 494 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS8960CDUAL N & P-CHANNEL POWERTRENCH M |
3521 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPU95R1K2P7AKMA1IPU95R1K2P7 - 950V COOLMOS N-CHA |
2250 | 0.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDD3672-F085FDD3672 - N-CHANNEL ULTRAFET TRE |
2687 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 6V, 10V | 47mOhm @ 21A, 6V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 1635 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFSA8409-7PAUIRFSA8409-7P - 20V-800V AUTOMO |
2686 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7230-55A/C1,118N-CHANNEL TRENCHMOS STANDARD LEV |
3369 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDC2512N-CHANNEL POWERTRENCH MOSFET 150 |
3825 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.4A (Ta) | 6V, 10V | 425mOhm @ 1.4A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 344 pF @ 75 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF3205PBFIRF3205 - 12V-300V N-CHANNEL POW |
2766 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±20V | 3247 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN9R5-30YLC,115NEXPERIA PSMN9R5-30YLC - 44A, 30 |
2357 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BSB014N04LX3GXUMA1BSB014N04 - TRENCH <= 40V |
3484 | 0.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 196 nC @ 10 V | ±20V | 16900 pF @ 20 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDN357NFDN357N - SMALL SIGNAL FIELD-EFF |
2352 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 4.5V, 10V | 60mOhm @ 2.2A, 10V | 2V @ 250µA | 5.9 nC @ 5 V | ±20V | 235 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC0310AS-F127N-CHANNEL POWERTRENCH SYNCFET 30 |
3307 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Tc) | - | 4.4mOhm @ 19A, 10V | 3V @ 1mA | 52 nC @ 10 V | - | 3165 pF @ 15 V | - | - | - | Surface Mount |
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