Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB27N25TM-F085P FQB27N25TM-F085P

FQB27N25TM-F085P

250V, 26A, 108M, D2PAKN-CHANNEL

onsemi

2240 0.00
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 131mOhm @ 25.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 1330 pF @ 25 V - 417W (Tj) -55°C ~ 150°C (TJ) Surface Mount
FDC658AP-G FDC658AP-G

FDC658AP-G

-30V SINGLE P-CHANNEL LOGIC LEVE

onsemi

3032 0.00
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Tape & Reel (TR) - Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 50mOhm @ 4A, 10V 3V @ 250µA 8.1 nC @ 5 V ±25V 680 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138-F169 BSS138-F169

BSS138-F169

50V N-CHANNEL LOGIC LEVEL ENHANC

onsemi

2438 0.00
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 50 V 220mA (Ta) 4.5V, 10V 3.5Ohm @ 220mA, 10V 1.5V @ 1mA 2.4 nC @ 10 V ±20V 27 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC637AN-NB5E023A FDC637AN-NB5E023A

FDC637AN-NB5E023A

SINGLE N-CHANNEL 2.5V SPECIFIED

onsemi

3093 0.00
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Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 20 V 6.2A (Ta) 2.5V, 4.5V 24mOhm @ 6.2A, 4.5V 1.5V @ 250µA 16 nC @ 4.5 V ±8V 1330 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002-F169 2N7002-F169

2N7002-F169

N-CHANNEL ENHANCEMENT MODE FIELD

onsemi

2150 0.00
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK764R0-55B,118

Таблицы данных

BUK764R0-55B,118

BUK764R0-55B,118

BUK764R0-55B - N-CHANNEL TRENCHM

Nexperia USA Inc.

3473 0.00
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 86 nC @ 10 V ±20V 6776 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA70N15

Таблицы данных

FQA70N15

FQA70N15

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi

2914 0.00
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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 70A (Tc) 10V 28mOhm @ 35A, 10V 4V @ 250µA 175 nC @ 10 V ±25V 5400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N50C3XKSA1

Таблицы данных

SPP04N50C3XKSA1

SPP04N50C3XKSA1

SPP04N50 - COOLMOS N-CHANNEL POW

Infineon Technologies

2153 0.00
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Bulk * Active - - - - - - - - - - - - - -
FCP125N65S3

Таблицы данных

FCP125N65S3

FCP125N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2021 0.00
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Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCD900N60Z

Таблицы данных

FCD900N60Z

FCD900N60Z

POWER FIELD-EFFECT TRANSISTOR, 4

onsemi

3645 0.00
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Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 900mOhm @ 2.3A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 720 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR18N15DTRPBF

Таблицы данных

IRFR18N15DTRPBF

IRFR18N15DTRPBF

IRFR18N15 - 12V-300V N-CHANNEL P

Infineon Technologies

2163 0.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4C50NT1G

Таблицы данных

NTMFS4C50NT1G

NTMFS4C50NT1G

30 V, 46A, SINGLE N-CHANNEL, POW

onsemi

3881 0.00
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Bulk * Active - - - - - - - - - - - - - -
FDC3535

Таблицы данных

FDC3535

FDC3535

P-CHANNEL POWER TRENCH MOSFET, -

onsemi

2915 0.00
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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 80 V 2.1A (Ta) 4.5V, 10V 183mOhm @ 2.1A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 880 pF @ 40 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC86184

Таблицы данных

FDMC86184

FDMC86184

N-CHANNEL SHIELDED GATE POWERTRE

onsemi

2930 0.00
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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 6V, 10V 8.5mOhm @ 21A, 10V 4V @ 110µA 20 nC @ 6 V ±20V 2090 pF @ 50 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX7002BKWX

Таблицы данных

NX7002BKWX

NX7002BKWX

SMALL SIGNAL FIELD-EFFECT TRANSI

Nexperia USA Inc.

3908 0.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP032N08

Таблицы данных

FDP032N08

FDP032N08

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2750 0.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76419D3ST

Таблицы данных

HUFA76419D3ST

HUFA76419D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

onsemi

2024 0.00
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Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN015-60PS,127

Таблицы данных

PSMN015-60PS,127

PSMN015-60PS,127

NEXPERIA PSMN015-60PS - 50A, 60V

NXP Semiconductors

3869 0.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 14.8mOhm @ 15A, 10V 4V @ 1mA 20.9 nC @ 10 V ±20V 1220 pF @ 30 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTF3055L108T3G

Таблицы данных

NTF3055L108T3G

NTF3055L108T3G

NTF3055L108 - SINGLE N-CHANNEL L

onsemi

3275 0.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 5V 120mOhm @ 1.5A, 5V 2V @ 250µA 15 nC @ 5 V ±15V 440 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R2-40BS,118

Таблицы данных

PSMN2R2-40BS,118

PSMN2R2-40BS,118

NEXPERIA PSMN2R2-40BS - 100A, 40

Nexperia USA Inc.

2769 0.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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