Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TP65H150G4LSG-TR650 V 13 A GAN FET |
210 | 5.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK2499-AZN-CHANNEL POWER MOSFET |
14277 | 3.40 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPP60R190E6XKSA1MOSFET N-CH 600V 20.2A TO220-3 |
410 | 4.24 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RJK60S3DPP-E0#T2MOSFET N-CH 600V 12A TO220FP |
128813 | 3.41 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | - | 440mOhm @ 6A, 10V | - | 13.6 nC @ 10 V | - | 720 pF @ 25 V | Super Junction | 27.7W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NP88N055MHE-S18-AYN-CHANNEL POWER MOSFET |
4700 | 3.41 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NP88N055KHE-E1-AYN-CHANNEL POWER MOSFET |
2400 | 3.41 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NP88N055MLE-S18-AYN-CHANNEL POWER MOSFET |
1350 | 3.41 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPB60R090CFD7ATMA1MOSFET N-CH 650V 25A TO263-3-2 |
1000 | 7.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF3805PBFMOSFET N-CH 55V 75A TO220AB |
2000 | 4.33 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP19NM50NMOSFET N-CH 500V 14A TO220AB |
996 | 4.34 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 250mOhm @ 7A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 1000 pF @ 50 V | - | 110W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM035NB04CZMOSFET N-CH 40V 18A/157A TO220 |
3860 | 4.37 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 18A (Ta), 157A (Tc) | - | 3.5mOhm @ 18A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 6990 pF @ 20 V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB5645MOSFET N-CH 60V 80A D2PAK |
8432 | 3.52 |
ДобавитьРасследования |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Ta) | 6V, 10V | 9.5mOhm @ 40A, 10V | 4V @ 250µA | 107 nC @ 10 V | ±20V | 4468 pF @ 30 V | - | 125W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTPF125N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
970 | 4.43 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tj) | 10V | 125mOhm @ 12A, 10V | 4V @ 2.1mA | 44 nC @ 10 V | ±30V | 2200 pF @ 400 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RJK0701DPN-E0#T2MOSFET N-CH 75V 100A TO220AB |
12407 | 3.55 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Ta) | - | 3.8mOhm @ 50A, 10V | - | 140 nC @ 10 V | - | 10 pF @ 10 V | - | 200W (Tc) | 150°C (TJ) | Through Hole |
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RJK1001DPN-E0#T2MOSFET N-CH 100V 80A TO220AB |
3363 | 3.55 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Ta) | - | 5.5mOhm @ 40A, 10V | - | 147 nC @ 10 V | - | 10 pF @ 10 V | - | 200W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NP161N04TUG-E1-AYMOSFET N-CH 40V 160A TO263-7 |
3200 | 3.55 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | - | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 345 nC @ 10 V | - | 20.25 pF @ 25 V | - | 1.8W (Ta), 250W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK3299B-S19-AYN-CHANNEL POWER MOSFET |
22000 | 3.59 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCI25N60NMOSFET N-CH 600V 25A I2PAK |
3000 | 3.59 |
ДобавитьРасследования |
Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NE5550279A-T1A-ASMALL SIGNAL N-CHANNEL MOSFET |
40000 | 3.61 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NE5550779A-T1A-AN-CHANNEL POWER MOSFET |
29836 | 3.61 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Запрос котировок
