Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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RFG30P05P-CHANNEL POWER MOSFET |
1617 | 2.59 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 30A (Tc) | 10V | 65mOhm @ 30A, 10V | 4V @ 250µA | 170 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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RJK6006DPP-A0#T2MOSFET N-CH 600V 10A TO220FP |
950 | 3.15 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 920mOhm @ 5A, 10V | - | 30 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 30W (Ta) | 150°C | Through Hole |
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Таблицы данных |
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FDS7788MOSFET N-CH 30V 18A 8SOIC |
73056 | 2.60 |
ДобавитьРасследования |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4mOhm @ 18A, 10V | 3V @ 250µA | 48 nC @ 5 V | ±20V | 3845 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TQM050NB06CR RLGMOSFET N-CH 60V 16A/104A PDFN56U |
4206 | 6.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Ta), 104A (Tc) | 7V, 10V | 5mOhm @ 16A, 10V | 3.8V @ 250µA | 114 nC @ 10 V | ±20V | 6904 pF @ 30 V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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Таблицы данных |
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FDS4770MOSFET N-CH 40V 13.2A 8SOIC |
14183 | 2.60 |
ДобавитьРасследования |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 13.2A (Ta) | 10V | 7.5mOhm @ 13.2A, 10V | 5V @ 250µA | 67 nC @ 10 V | ±20V | 2819 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NP110N04PUK-E1-AYMOSFET N-CH 40V 110A TO263-3 |
800 | 5.04 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 1.4mOhm @ 55A, 10V | 4V @ 250µA | 297 nC @ 10 V | ±20V | 15750 pF @ 25 V | - | 1.8W (Ta), 348W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLS3034TRLAUTOMOTIVE HEXFET N-CHANNEL |
23801 | 2.61 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | - | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | - | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF740LCPBF-BE3MOSFET N-CH 400V 10A TO220AB |
987 | 3.17 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | - | 550mOhm @ 6A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRLS3034AUTOMOTIVE HEXFET N-CHANNEL |
4132 | 2.61 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK3709MOSFET N-CH 100V 37A TO220ML |
22227 | 2.62 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Ta) | - | 25mOhm @ 19A, 10V | - | 117 nC @ 10 V | - | 6250 pF @ 20 V | - | 2W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP024N08NF2SAKMA1TRENCH 40<-<100V |
971 | 3.19 |
ДобавитьРасследования |
Tube | StrongIRFET™ 2 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28A (Ta), 182A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 139µA | 133 nC @ 10 V | ±20V | 6200 pF @ 40 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BTS244ZE3062AATMA1N-CHANNEL POWER MOSFET |
47750 | 2.64 |
ДобавитьРасследования |
Bulk | * | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | - | 170W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTP011N15MCMOSFET N-CH 150V 9.8/74.3A TO220 |
719 | 3.21 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9.8A (Ta), 74.3A (Tc) | - | 10.9mOhm @ 41A, 10V | 4.5V @ 223µA | 37 nC @ 10 V | ±20V | 2810 pF @ 75 V | - | 2.4W (Ta), 136.4W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHA21N80AEF-GE3EF SERIES POWER MOSFET WITH FAST |
975 | 3.22 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 250mOhm @ 8.5A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±30V | 1511 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD186N60EF-GE3MOSFET N-CH 600V 19A DPAK |
6000 | 3.23 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 201mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1118 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQPF12N60MOSFET N-CH 600V 5.8A TO220F |
55453 | 2.66 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.8A (Tc) | 10V | 700mOhm @ 2.9A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP100N18N3GXKSA1N-CHANNEL POWER MOSFET |
12850 | 2.66 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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2SK1402A-EN-CHANNEL POWER MOSFET |
3262 | 2.66 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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RJK6012DPP-00#T2N-CHANNEL POWER MOSFET |
1385 | 2.66 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IXTA1R4N100PMOSFET N-CH 1000V 1.4A TO263 |
110 | 3.24 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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