Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN023-40YLCX PSMN023-40YLCX

PSMN023-40YLCX

MOSFET N-CH 40V 24A LFPAK56

NXP USA Inc.

3244 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 24A (Tc) 4.5V, 10V 23mOhm @ 5A, 10V 1.95V @ 1mA 8.4 nC @ 10 V ±20V 520 pF @ 20 V - 25W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCP87130T-U/LC

Таблицы данных

MCP87130T-U/LC

MCP87130T-U/LC

MOSFET N-CH 25V 43A 8PDFN

Microchip Technology

3303 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 43A (Tc) 3.3V, 10V 13.5mOhm @ 10A, 10V 1.7V @ 250µA 8 nC @ 4.5 V +10V, -8V 400 pF @ 12.5 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87130T-U/MF

Таблицы данных

MCP87130T-U/MF

MCP87130T-U/MF

MOSFET N-CH 25V 43A 8PDFN

Microchip Technology

2782 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 43A (Tc) 3.3V, 10V 13.5mOhm @ 10A, 10V 1.7V @ 250µA 8 nC @ 4.5 V +10V, -8V 400 pF @ 12.5 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87055T-U/LC

Таблицы данных

MCP87055T-U/LC

MCP87055T-U/LC

MOSFET N-CH 25V 60A 8PDFN

Microchip Technology

4000 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 1.7V @ 250µA 14 nC @ 4.5 V +10V, -8V 890 pF @ 12.5 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87050T-U/MF

Таблицы данных

MCP87050T-U/MF

MCP87050T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

3654 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 1.6V @ 250µA 15 nC @ 4.5 V +10V, -8V 1040 pF @ 12.5 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87030T-U/MF

Таблицы данных

MCP87030T-U/MF

MCP87030T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

2271 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 1.6V @ 250µA 22 nC @ 4.5 V +10V, -8V 1635 pF @ 12.5 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87022T-U/MF

Таблицы данных

MCP87022T-U/MF

MCP87022T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

2391 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 2.3mOhm @ 25A, 10V 1.6V @ 250µA 29 nC @ 4.5 V +10V, -8V 2310 pF @ 12.5 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCP87018T-U/MF

Таблицы данных

MCP87018T-U/MF

MCP87018T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Microchip Technology

3144 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 3.3V, 10V 1.9mOhm @ 25A, 10V 1.6V @ 250µA 37 nC @ 4.5 V +10V, -8V 2925 pF @ 12.5 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMG9N65CTI

Таблицы данных

DMG9N65CTI

DMG9N65CTI

MOSFET N-CH 650V 9A ITO220AB

Diodes Incorporated

2545 0.00
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 1.3Ohm @ 4.5A, 10V 5V @ 250µA 39 nC @ 10 V ±30V 2310 pF @ 25 V - 13W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMG4N65CT

Таблицы данных

DMG4N65CT

DMG4N65CT

MOSFET N CH 650V 4A TO220-3

Diodes Incorporated

3292 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 250µA 13.5 nC @ 10 V ±30V 900 pF @ 25 V - 2.19W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF6725MTRPBF

Таблицы данных

IRF6725MTRPBF

IRF6725MTRPBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies

2826 0.00
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Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PSMN8R5-100ESQ

Таблицы данных

PSMN8R5-100ESQ

PSMN8R5-100ESQ

MOSFET N-CH 100V 100A I2PAK

Nexperia USA Inc.

2256 0.00
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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK761R4-30E,118 BUK761R4-30E,118

BUK761R4-30E,118

MOSFET N-CH 30V 120A D2PAK

NXP USA Inc.

5055 1.06
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.45mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9580 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R5-30E,118 BUK961R5-30E,118

BUK961R5-30E,118

MOSFET N-CH 30V 120A D2PAK

NXP USA Inc.

4767 1.06
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 5V, 10V 1.3mOhm @ 25A, 10V 2.1V @ 1mA 93.4 nC @ 5 V ±10V 14500 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R6-40E,118

Таблицы данных

BUK762R6-40E,118

BUK762R6-40E,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

2801 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 7130 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK763R9-60E,118

Таблицы данных

BUK763R9-60E,118

BUK763R9-60E,118

MOSFET N-CH 60V 100A D2PAK

Nexperia USA Inc.

1800 1.07
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.9mOhm @ 25A, 10V 4V @ 1mA 103 nC @ 10 V ±20V 7480 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GA05JT12-263

Таблицы данных

GA05JT12-263

GA05JT12-263

TRANS SJT 1200V 15A D2PAK

GeneSiC Semiconductor

3236 0.00
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Расследования

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 15A (Tc) - - - - - - - 106W (Tc) 175°C (TJ) Surface Mount
GA05JT12-247 GA05JT12-247

GA05JT12-247

TRANS SJT 1200V 5A TO247AB

GeneSiC Semiconductor

3776 0.00
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Расследования

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 5A (Tc) - 280mOhm @ 5A - - - - - 106W (Tc) 175°C (TJ) Through Hole
GA10JT12-247

Таблицы данных

GA10JT12-247

GA10JT12-247

TRANS SJT 1200V 10A TO247AB

GeneSiC Semiconductor

3174 0.00
- +

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Расследования

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 10A (Tc) - 140mOhm @ 10A - - - - - 170W (Tc) 175°C (TJ) Through Hole
GA20JT12-247

Таблицы данных

GA20JT12-247

GA20JT12-247

TRANS SJT 1200V 20A TO247AB

GeneSiC Semiconductor

2543 0.00
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Расследования

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) - 70mOhm @ 20A - - - - - 282W (Tc) 175°C (TJ) Through Hole
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