Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFH5206TRPBFMOSFET N-CH 60V 16A/89A 8PQFN |
2797 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Ta), 89A (Tc) | 10V | 6.7mOhm @ 50A, 10V | 4V @ 100µA | 60 nC @ 10 V | ±20V | 2490 pF @ 25 V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP80N70F6MOSFET N-CH 68V 96A TO220 |
2506 | 0.00 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VI | Obsolete | N-Channel | MOSFET (Metal Oxide) | 68 V | 96A (Tc) | 10V | 8mOhm @ 48A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±20V | 5850 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRLL2705MOSFET N-CH 55V 5.2A SOT223 |
2140 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48 nC @ 10 V | ±16V | 870 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB7437GPBFMOSFET N CH 40V 195A TO220AB |
3184 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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AUIRF5210SMOSFET P-CH 100V 38A D2PAK |
3498 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 2780 pF @ 25 V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB7434GPBFMOSFET N CH 40V 195A TO220AB |
3941 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IRF7738L2TRPBFMOSFET N-CH 40V 35A DIRECTFET |
3207 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Ta), 184A (Tc) | 10V | 1.6mOhm @ 109A, 10V | 4V @ 250µA | 194 nC @ 10 V | ±20V | 7471 pF @ 25 V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB7446GPBFMOSFET N CH 40V 120A TO220AB |
2214 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | - | Through Hole |
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Таблицы данных |
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IRFB7430GPBFMOSFET N CH 40V 195A TO220AB |
3450 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IRF7737L2TRPBFMOSFET N-CH 40V 31A DIRECTFET |
2609 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134 nC @ 10 V | ±20V | 5469 pF @ 25 V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU3607-701PBFMOSFET N-CH 75V 56A IPAK |
2695 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFHP8334TRPBFMOSFET 30V 25A POWER 8-SO |
3645 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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IRFHP8321TRPBFMOSFET 30V 25A POWER 8-SO |
2142 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFP4332-203PBFMOSFET N-CH 250V 57A TO247AC |
3776 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5860 pF @ 25 V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU3607TRL701PMOSFET N CH 75V 56A IPAK |
2454 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFR540ZMOSFET N-CH 100V 35A DPAK |
2939 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS6535MOSFET N-CH 300V 19A D2PAK |
3336 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFU4292MOSFET N CH 250V 9.3A IPAK |
3861 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20 nC @ 10 V | ±20V | 705 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFU3607MOSFET N CH 75V 56A I-PAK |
3300 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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GA03JT12-247TRANS SJT 1200V 3A TO247AB |
2914 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole |
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