Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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HCT7000MTXVMOSFET N-CH 60V 200MA 3SMD |
3997 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDA2712MOSFET N-CH 250V 64A TO3PN |
2614 | 0.00 |
ДобавитьРасследования |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 10175 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDD6N20TFMOSFET N-CH 200V 4.5A D-PAK |
3081 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | UniFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.5A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 5V @ 250µA | 6.1 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDZ4670MOSFET N-CH 30V 25A 20FLFBGA |
3564 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 3540 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQA6N90_F109MOSFET N-CH 900V 6.4A TO3P |
2576 | 0.00 |
ДобавитьРасследования |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.4A (Tc) | 10V | 1.9Ohm @ 3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1880 pF @ 25 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP12N50MOSFET N-CH 500V 11.5A TO220-3 |
2189 | 0.00 |
ДобавитьРасследования |
Tube | UniFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1315 pF @ 25 V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP8442MOSFET N-CH 40V 23A/80A TO220-3 |
3218 | 0.00 |
ДобавитьРасследования |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDZ7296MOSFET N-CH 30V 11A 18BGA |
3520 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 8.5mOhm @ 11A, 10V | 3V @ 250µA | 31 nC @ 10 V | ±20V | 1520 pF @ 15 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDM100-0045SPMOSFET N-CH 55V 100A I4PAC |
3947 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 7.2mOhm @ 80A, 10V | 4V @ 1mA | 100 nC @ 10 V | ±20V | - | - | - | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDM21-05QCMOSFET N-CH 500V 21A I4PAC |
3174 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 220mOhm @ 15A, 10V | 4.5V @ 250µA | 95 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FMD80-0045PSMOSFET N-CH 55V 150A I4PAC |
2032 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 110A, 10V | 4V @ 1mA | 86 nC @ 10 V | ±20V | - | - | - | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXCP01N90EMOSFET N-CH 900V 250MA TO220AB |
2636 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 250mA (Tc) | 10V | 80Ohm @ 50mA, 10V | 5V @ 25µA | 7.5 nC @ 10 V | ±20V | 133 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXCY01N90EMOSFET N-CH 900V 250MA TO252 |
3085 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 250mA (Tc) | 10V | 80Ohm @ 50mA, 10V | 5V @ 25µA | 7.5 nC @ 10 V | ±20V | 133 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA3N80MOSFET N-CH 800V 3.6A TO263 |
3518 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 3.6Ohm @ 500mA, 10V | 4.5V @ 1mA | 24 nC @ 10 V | ±20V | 685 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFB38N100Q2MOSFET N-CH 1000V 38A PLUS264 |
2335 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q2 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 250mOhm @ 19A, 10V | 5.5V @ 8mA | 250 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB50N80Q2MOSFET N-CH 800V 50A PLUS264 |
3119 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q2 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 50A (Tc) | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB72N55Q2MOSFET N-CH 550V 72A PLUS264 |
2591 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q2 Class | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 72A (Tc) | 10V | 72mOhm @ 500mA, 10V | 5V @ 8mA | 258 nC @ 10 V | ±30V | 10500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB80N50Q2MOSFET N-CH 500V 80A PLUS264 |
3599 | 0.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q2 Class | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 60mOhm @ 500mA, 10V | 5.5V @ 8mA | 250 nC @ 10 V | ±30V | 15000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFC10N80PMOSFET N-CH 800V 5A ISOPLUS220 |
2219 | 0.00 |
ДобавитьРасследования |
Tube | PolarHV™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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IXFC110N10PMOSFET N-CH 100V 60A ISOPLUS220 |
2301 | 0.00 |
ДобавитьРасследования |
Box | HiPerFET™, PolarHT™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 17mOhm @ 55A, 10V | 5V @ 4mA | 110 nC @ 10 V | ±20V | 3550 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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