Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6648TR1PBF

Таблицы данных

IRF6648TR1PBF

IRF6648TR1PBF

MOSFET N-CH 60V 86A DIRECTFET MN

Infineon Technologies

3095 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 10V 7mOhm @ 17A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2120 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6655TRPBF

Таблицы данных

IRF6655TRPBF

IRF6655TRPBF

MOSFET N-CH 100V 4.2A DIRECTFET

Infineon Technologies

2426 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 4.8V @ 25µA 11.7 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6662TR1PBF

Таблицы данных

IRF6662TR1PBF

IRF6662TR1PBF

MOSFET N-CH 100V 8.3A DIRECTFET

Infineon Technologies

2843 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 47A (Tc) 10V 22mOhm @ 8.2A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1360 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6665TR1PBF

Таблицы данных

IRF6665TR1PBF

IRF6665TR1PBF

MOSFET N-CH 100V 4.2A DIRECTFET

Infineon Technologies

2939 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 5V @ 250µA 13 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6668TR1PBF

Таблицы данных

IRF6668TR1PBF

IRF6668TR1PBF

MOSFET N-CH 80V 55A DIRECTFET MZ

Infineon Technologies

2164 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 15mOhm @ 12A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1320 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6678TR1PBF

Таблицы данных

IRF6678TR1PBF

IRF6678TR1PBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies

2003 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.25V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6691TR1PBF

Таблицы данных

IRF6691TR1PBF

IRF6691TR1PBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies

3523 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6691TRPBF

Таблицы данных

IRF6691TRPBF

IRF6691TRPBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies

3605 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V 2.5V @ 250µA 71 nC @ 4.5 V ±12V 6580 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDMJ1027P FDMJ1027P

FDMJ1027P

MOSFET P-CH 20V 3.2A 6MICROFET

onsemi

3458 0.00
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Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) - - - - - - - - - Surface Mount
IXTA8N50P

Таблицы данных

IXTA8N50P

IXTA8N50P

MOSFET N-CH 500V 8A TO263

IXYS

2475 0.00
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Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5.5V @ 100µA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK2231(TE16R1,NQ)

Таблицы данных

2SK2231(TE16R1,NQ)

2SK2231(TE16R1,NQ)

MOSFET N-CH 60V 5A PW-MOLD

Toshiba Semiconductor and Storage

4000 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 160mOhm @ 2.5A, 10V 2V @ 1mA 12 nC @ 10 V ±20V 370 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
FDA16N50

Таблицы данных

FDA16N50

FDA16N50

MOSFET N-CH 500V 16.5A TO3PN

onsemi

2574 0.00
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Расследования

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP16N50

Таблицы данных

FDP16N50

FDP16N50

MOSFET N-CH 500V 16A TO220-3

onsemi

2870 0.00
- +

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Расследования

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP79N15

Таблицы данных

FDP79N15

FDP79N15

MOSFET N-CH 150V 79A TO220-3

onsemi

2627 0.00
- +

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Расследования

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 79A (Tc) 10V 30mOhm @ 39.5A, 10V 5V @ 250µA 73 nC @ 10 V ±30V 3410 pF @ 25 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU8580

Таблицы данных

FDU8580

FDU8580

MOSFET N-CH 20V 35A I-PAK

onsemi

2527 0.00
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Расследования

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU8586

Таблицы данных

FDU8586

FDU8586

MOSFET N-CH 20V 35A I-PAK

onsemi

2754 0.00
- +

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Расследования

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCD4N60TF

Таблицы данных

FCD4N60TF

FCD4N60TF

MOSFET N-CH 600V 3.9A DPAK

onsemi

2187 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.9A (Tc) 10V 1.2Ohm @ 2A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 540 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8580

Таблицы данных

FDD8580

FDD8580

MOSFET N-CH 20V 35A DPAK

onsemi

2672 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8586

Таблицы данных

FDD8586

FDD8586

MOSFET N-CH 20V 35A TO252AA

onsemi

2801 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDFS6N754

Таблицы данных

FDFS6N754

FDFS6N754

MOSFET N-CH 30V 4A 8SOIC

onsemi

3990 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 56mOhm @ 4A, 10V 2.5V @ 250µA 6 nC @ 10 V ±20V 299 pF @ 15 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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