Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRF3704LPBFMOSFET N-CH 20V 77A TO262 |
2454 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1996 pF @ 10 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF734PBFMOSFET N-CH 450V 4.9A TO220AB |
2184 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.9A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL3716PBFMOSFET N-CH 20V 180A TO220AB |
3558 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF1010EZLPBFMOSFET N-CH 60V 75A TO262 |
3238 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRL3402SPBFMOSFET N-CH 20V 85A D2PAK |
3516 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | ±10V | 3300 pF @ 15 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBC20LPBFMOSFET N-CH 600V 2.2A TO262-3 |
3866 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRC634PBFMOSFET N-CH 250V 8.1A TO220-5 |
2783 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 4.9A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF640LPBFMOSFET N-CH 200V 18A TO262-3 |
2317 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRC730PBFMOSFET N-CH 400V 5.5A TO220-5 |
3236 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL3303LPBFMOSFET N-CH 30V 38A TO262 |
3229 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF4104LPBFMOSFET N-CH 40V 75A TO262 |
2435 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRC830PBFMOSFET N-CH 500V 4.5A TO220-5 |
2488 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFI744GPBFMOSFET N-CH 450V 4.9A TO220-3 |
3135 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.9A (Tc) | 10V | 630mOhm @ 2.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL17N20DPBFMOSFET N-CH 200V 16A TO262 |
2213 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFI734GPBFMOSFET N-CH 450V 3.4A TO220-3 |
3660 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 3.4A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL23N15DPBFMOSFET N-CH 150V 23A TO262 |
3660 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRC630PBFMOSFET N-CH 200V 9A TO220-5 |
3320 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL3103LPBFMOSFET N-CH 30V 64A TO262 |
3619 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33 nC @ 4.5 V | ±16V | 1650 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRL1004LPBFMOSFET N-CH 40V 130A TO262 |
2136 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF1010NLPBFMOSFET N-CH 55V 85A TO262 |
3824 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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