Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP05N03LA

Таблицы данных

IPP05N03LA

IPP05N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies

2340 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06N03LA

Таблицы данных

IPP06N03LA

IPP06N03LA

MOSFET N-CH 25V 50A TO220-3

Infineon Technologies

3440 0.00
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Расследования

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6.2mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA04N50C3XKSA1

Таблицы данных

SPA04N50C3XKSA1

SPA04N50C3XKSA1

MOSFET N-CH 560V 4.5A TO220-FP

Infineon Technologies

2178 0.00
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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP04N03LA

Таблицы данных

IPP04N03LA

IPP04N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies

2570 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N50C3HKSA1

Таблицы данных

SPP04N50C3HKSA1

SPP04N50C3HKSA1

MOSFET N-CH 560V 4.5A TO220-3

Infineon Technologies

2317 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP20N60C3HKSA1

Таблицы данных

SPP20N60C3HKSA1

SPP20N60C3HKSA1

MOSFET N-CH 600V 20.7A TO220-3

Infineon Technologies

3875 0.00
- +

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Расследования

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP21N50C3HKSA1

Таблицы данных

SPP21N50C3HKSA1

SPP21N50C3HKSA1

MOSFET N-CH 560V 21A TO220-3

Infineon Technologies

2425 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA21N50C3XKSA1

Таблицы данных

SPA21N50C3XKSA1

SPA21N50C3XKSA1

MOSFET N-CH 560V 21A TO220-FP

Infineon Technologies

2499 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP02N60C3HKSA1

Таблицы данных

SPP02N60C3HKSA1

SPP02N60C3HKSA1

MOSFET N-CH 650V 1.8A TO220-3

Infineon Technologies

3218 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP03N60C3HKSA1

Таблицы данных

SPP03N60C3HKSA1

SPP03N60C3HKSA1

MOSFET N-CH 650V 3.2A TO220-3

Infineon Technologies

2596 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI07N60C3HKSA1

Таблицы данных

SPI07N60C3HKSA1

SPI07N60C3HKSA1

MOSFET N-CH 650V 7.3A TO262-3

Infineon Technologies

3323 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP16N50C3HKSA1

Таблицы данных

SPP16N50C3HKSA1

SPP16N50C3HKSA1

MOSFET N-CH 560V 16A TO220-3

Infineon Technologies

2829 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA12N50C3XKSA1

Таблицы данных

SPA12N50C3XKSA1

SPA12N50C3XKSA1

MOSFET N-CH 560V 11.6A TO220-FP

Infineon Technologies

2178 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP12N50C3HKSA1

Таблицы данных

SPP12N50C3HKSA1

SPP12N50C3HKSA1

MOSFET N-CH 560V 11.6A TO220-3

Infineon Technologies

2400 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA04N60C3XKSA1

Таблицы данных

SPA04N60C3XKSA1

SPA04N60C3XKSA1

MOSFET N-CH 650V 4.5A TO220-FP

Infineon Technologies

3465 1.00
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP04N60C3HKSA1

Таблицы данных

SPP04N60C3HKSA1

SPP04N60C3HKSA1

MOSFET N-CH 650V 4.5A TO220-3

Infineon Technologies

2127 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP08N50C3XKSA1

Таблицы данных

SPP08N50C3XKSA1

SPP08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-3

Infineon Technologies

2241 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA08N50C3XKSA1

Таблицы данных

SPA08N50C3XKSA1

SPA08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-FP

Infineon Technologies

2823 1.00
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSL207SP

Таблицы данных

BSL207SP

BSL207SP

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies

3393 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V 1.2V @ 40µA 20 nC @ 4.5 V ±12V 1007 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL211SP

Таблицы данных

BSL211SP

BSL211SP

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies

2496 0.00
- +

Добавить

Расследования

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 4.5 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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