Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP18P06PHKSA1

Таблицы данных

SPP18P06PHKSA1

SPP18P06PHKSA1

MOSFET P-CH 60V 18.7A TO220-3

Infineon Technologies

3484 0.00
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Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
SPP20N60S5

Таблицы данных

SPP20N60S5

SPP20N60S5

MOSFET N-CH 650V 20A TO220-3

Infineon Technologies

3438 0.00
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Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS119E6327

Таблицы данных

BSS119E6327

BSS119E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

2735 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2.3V @ 50µA 2.5 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP123L6327HTSA1

Таблицы данных

BSP123L6327HTSA1

BSP123L6327HTSA1

MOSFET N-CH 100V 370MA SOT223-4

Infineon Technologies

3363 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 370mA (Ta) 2.8V, 10V 6Ohm @ 370mA, 10V 1.8V @ 50µA 2.4 nC @ 10 V ±20V 70 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP129E6327

Таблицы данных

BSP129E6327

BSP129E6327

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies

2609 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP295E6327

Таблицы данных

BSP295E6327

BSP295E6327

MOSFET N-CH 60V 1.8A SOT223-4

Infineon Technologies

2955 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 4.5V, 10V 300mOhm @ 1.8A, 10V 1.8V @ 400µA 17 nC @ 10 V ±20V 368 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP296E6327

Таблицы данных

BSP296E6327

BSP296E6327

MOSFET N-CH 100V 1.1A SOT223-4

Infineon Technologies

2949 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Ta) 4.5V, 10V 700mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2 nC @ 10 V ±20V 364 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP315P-E6327

Таблицы данных

BSP315P-E6327

BSP315P-E6327

MOSFET P-CH 60V 1.17A SOT223-4

Infineon Technologies

3881 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.17A (Ta) 4.5V, 10V 800mOhm @ 1.17A, 10V 2V @ 160µA 7.8 nC @ 10 V ±20V 160 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP88E6327

Таблицы данных

BSP88E6327

BSP88E6327

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies

263394 0.19
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 2.8V, 4.5V 6Ohm @ 350mA, 10V 1.4V @ 108µA 6.8 nC @ 10 V ±20V 95 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123E6327

Таблицы данных

BSS123E6327

BSS123E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

2557 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.67 nC @ 10 V ±20V 69 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS131E6327

Таблицы данных

BSS131E6327

BSS131E6327

MOSFET N-CH 240V 110MA SOT23-3

Infineon Technologies

3140 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 110mA (Ta) 4.5V, 10V 14Ohm @ 100mA, 10V 1.8V @ 56µA 3.1 nC @ 10 V ±20V 77 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138N-E6327

Таблицы данных

BSS138N-E6327

BSS138N-E6327

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies

2031 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V 1.4V @ 250µA 1.4 nC @ 10 V ±20V 41 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84P-E6327

Таблицы данных

BSS84P-E6327

BSS84P-E6327

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies

2735 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS87E6327

Таблицы данных

BSS87E6327

BSS87E6327

MOSFET N-CH 240V 260MA SOT89-4

Infineon Technologies

3581 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V 1.8V @ 108µA 5.5 nC @ 10 V ±20V 97 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD07N60S5

Таблицы данных

SPD07N60S5

SPD07N60S5

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

2719 0.64
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZXM64P035L3

Таблицы данных

ZXM64P035L3

ZXM64P035L3

MOSFET P-CH 35V 3.3A/12A TO220-3

Diodes Incorporated

3700 0.00
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Расследования

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 35 V 3.3A (Ta), 12A (Tc) 4.5V, 10V 75mOhm @ 2.4A, 10V 1V @ 250µA 46 nC @ 10 V ±20V 825 pF @ 25 V - 1.5W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU7833

Таблицы данных

IRLU7833

IRLU7833

MOSFET N-CH 30V 140A I-PAK

Infineon Technologies

3757 0.00
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Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6601

Таблицы данных

IRF6601

IRF6601

MOSFET N-CH 20V 26A DIRECTFET

Infineon Technologies

3686 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 85A (Tc) 4.5V, 10V 3.8mOhm @ 26A, 10V 2.2V @ 250µA 45 nC @ 4.5 V ±20V 3440 pF @ 15 V - 3.6W (Ta), 42W (Tc) - Surface Mount
IRF6602

Таблицы данных

IRF6602

IRF6602

MOSFET N-CH 20V 11A DIRECTFET

Infineon Technologies

3160 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 11A (Ta), 48A (Tc) 4.5V, 10V 13mOhm @ 11A, 10V 2.3V @ 250µA 18 nC @ 4.5 V ±20V 1420 pF @ 10 V - 2.3W (Ta), 42W (Tc) - Surface Mount
IRF6603

Таблицы данных

IRF6603

IRF6603

MOSFET N-CH 30V 27A DIRECTFET

Infineon Technologies

2741 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 92A (Tc) 4.5V, 10V 3.4mOhm @ 25A, 10V 2.5V @ 250µA 72 nC @ 4.5 V +20V, -12V 6590 pF @ 15 V - 3.6W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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