Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFBC40STRLMOSFET N-CH 600V 6.2A D2PAK |
2660 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBC40STRRMOSFET N-CH 600V 6.2A D2PAK |
3026 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBE20LMOSFET N-CH 800V 1.8A I2PAK |
3149 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IRFBE20SMOSFET N-CH 800V 1.8A D2PAK |
2668 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBE20STRLMOSFET N-CH 800V 1.8A D2PAK |
3892 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBE20STRRMOSFET N-CH 800V 1.8A D2PAK |
3458 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBE30LMOSFET N-CH 800V 4.1A I2PAK |
3613 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IRFBE30SMOSFET N-CH 800V 4.1A D2PAK |
3693 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBE30STRLMOSFET N-CH 800V 4.1A D2PAK |
3625 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBE30STRRMOSFET N-CH 800V 4.1A D2PAK |
3045 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBF20STRLMOSFET N-CH 900V 1.7A D2PAK |
2348 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBF20STRRMOSFET N-CH 900V 1.7A D2PAK |
2609 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBF30LMOSFET N-CH 900V 3.6A I2PAK |
3998 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFBF30SMOSFET N-CH 900V 3.6A D2PAK |
2165 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBF30STRLMOSFET N-CH 900V 3.6A D2PAK |
2832 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IRFBF30STRRMOSFET N-CH 900V 3.6A D2PAK |
3662 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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IRFBG20LMOSFET N-CH 1000V 1.4A I2PAK |
3816 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Ta) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 500 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IRFBL3315MOSFET N-CH 150V 21A SUPER D2PAK |
2092 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount |
|
Таблицы данных |
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IRFI2807MOSFET N-CH 75V 40A TO220AB FP |
3015 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 40A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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IRFI4905MOSFET P-CH 55V 41A TO220AB FP |
2797 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 41A (Tc) | 10V | 20mOhm @ 22A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 63W (Tc) | - | Through Hole |
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