Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF11N60M2-EP

Таблицы данных

STF11N60M2-EP

STF11N60M2-EP

MOSFET N-CH 600V 7.5A TO220FP

STMicroelectronics

3266 1.00
- +

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Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 595mOhm @ 3.75A, 10V 4.75V @ 250µA 12.4 nC @ 10 V ±25V 390 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMTH61M5SPSW-13

Таблицы данных

DMTH61M5SPSW-13

DMTH61M5SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

3548 1.00
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 225A (Tc) 10V 1.5mOhm @ 30A, 10V 4V @ 250µA 130.6 nC @ 10 V ±20V 8306 pF @ 30 V - 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH61M8SPS-13

Таблицы данных

DMTH61M8SPS-13

DMTH61M8SPS-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

3939 1.00
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 215A (Tc) 10V 1.6mOhm @ 30A, 10V 4V @ 250µA 130.6 nC @ 10 V ±20V 8306 pF @ 30 V - 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK46E08N1,S1X

Таблицы данных

TK46E08N1,S1X

TK46E08N1,S1X

MOSFET N-CH 80V 80A TO220

Toshiba Semiconductor and Storage

3054 1.00
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Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 103W (Tc) 150°C (TJ) Through Hole
NVMYS006N08LHTWG

Таблицы данных

NVMYS006N08LHTWG

NVMYS006N08LHTWG

T8 80V LL LFPAK

onsemi

3450 1.00
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 77A (Tc) 4.5V, 10V 6.2mOhm @ 15A, 10V 2V @ 95µA 34 nC @ 10 V ±20V 1950 pF @ 40 V - 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL7732S2TR

Таблицы данных

AUIRL7732S2TR

AUIRL7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

Infineon Technologies

2091 1.00
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Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 4.5V, 10V 6.6mOhm @ 35A, 10V 2.5V @ 50µA 33 nC @ 4.5 V ±16V 2020 pF @ 25 V - 2.2W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR846ADP-T1-RE3 SIR846ADP-T1-RE3

SIR846ADP-T1-RE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

2102 1.00
- +

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Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 7.8mOhm @ 20A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 2350 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44ESTRRPBF

Таблицы данных

IRFZ44ESTRRPBF

IRFZ44ESTRRPBF

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

2239 1.00
- +

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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF8NM50N

Таблицы данных

STF8NM50N

STF8NM50N

MOSFET N-CH 500V 5A TO220FP

STMicroelectronics

2889 1.00
- +

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Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 790mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 364 pF @ 50 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR4104TRLPBF

Таблицы данных

IRFR4104TRLPBF

IRFR4104TRLPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

3729 1.00
- +

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Расследования

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK8R2E06PL,S1X

Таблицы данных

TK8R2E06PL,S1X

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3976 0.97
- +

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Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C Through Hole
TJ90S04M3L,LQ

Таблицы данных

TJ90S04M3L,LQ

TJ90S04M3L,LQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2693 0.97
- +

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Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) 4.5V, 10V 4.3mOhm @ 45A, 10V 2V @ 1mA 172 nC @ 10 V +10V, -20V 7700 pF @ 10 V - 180W (Tc) 175°C Surface Mount
IRFR9024PBF-BE3

Таблицы данных

IRFR9024PBF-BE3

IRFR9024PBF-BE3

P-CHANNEL 60V

Vishay Siliconix

3537 1.03
- +

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFU13N60M2 STFU13N60M2

STFU13N60M2

MOSFET N-CH 600V TO-220FP

STMicroelectronics

3606 1.03
- +

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Tube * Active - - - - - - - - - - - - - -
AOW12N65

Таблицы данных

AOW12N65

AOW12N65

MOSFET N-CH 650V 12A TO262

Alpha & Omega Semiconductor Inc.

3418 1.03
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 720mOhm @ 6A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2150 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF600A60

Таблицы данных

AOWF600A60

AOWF600A60

MOSFET N-CH 600V 8A TO262F

Alpha & Omega Semiconductor Inc.

2271 1.03
- +

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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tj) 10V 600mOhm @ 2.1A, 10V 3.5V @ 250µA 11.5 nC @ 10 V ±20V 608 pF @ 100 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
R4008ANDTL

Таблицы данных

R4008ANDTL

R4008ANDTL

MOSFET N-CH 400V 8A CPT3

Rohm Semiconductor

3104 1.04
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 8A (Ta) 10V 950mOhm @ 4A, 10V 4.5V @ 1mA 15 nC @ 10 V ±30V 500 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
RSH140N03TB1

Таблицы данных

RSH140N03TB1

RSH140N03TB1

MOSFET N-CH 30V 14A 8SOP

Rohm Semiconductor

2704 1.01
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4V, 10V - - - ±20V - - 2W (Ta) 150°C (TJ) Surface Mount
TK12P60W,RVQ

Таблицы данных

TK12P60W,RVQ

TK12P60W,RVQ

MOSFET N CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

2210 1.01
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Surface Mount
ZXMN3A04KTC

Таблицы данных

ZXMN3A04KTC

ZXMN3A04KTC

MOSFET N-CH 30V 18.4A DPAK

Diodes Incorporated

2080 1.89
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
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