Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-40HFL40S02

Таблицы данных

VS-40HFL40S02

VS-40HFL40S02

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2397 9.94
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 100 µA @ 400 V 400 V 40A -40°C ~ 125°C 1.95 V @ 40 A
JANTXV1N6630US

Таблицы данных

JANTXV1N6630US

JANTXV1N6630US

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

2064 25.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 2 µA @ 1000 V 1000 V 1.4A -65°C ~ 150°C 1.4 V @ 1.4 A
1N3263

Таблицы данных

1N3263

1N3263

DIODE GEN PURP 200V 160A DO205AB

Powerex Inc.

3126 52.19
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 12 mA @ 200 V 200 V 160A -65°C ~ 175°C -
JANTX1N5285-1

Таблицы данных

JANTX1N5285-1

JANTX1N5285-1

DIODE CURRENT REG 100V

Microchip Technology

3439 32.03
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTXV1N5307-1

Таблицы данных

JANTXV1N5307-1

JANTXV1N5307-1

DIODE CURRENT REG 100V

Microchip Technology

3817 35.01
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
FR12J02

Таблицы данных

FR12J02

FR12J02

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

2769 9.35
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 250 ns 25 µA @ 100 V 600 V 12A -65°C ~ 150°C 800 mV @ 12 A
JANTX1N6639US

Таблицы данных

JANTX1N6639US

JANTX1N6639US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

2395 9.95
- +

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Расследования

Bulk Military, MIL-PRF-19500/609 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 4 ns 100 nA @ 75 V 75 V 300mA (DC) -65°C ~ 175°C 1.2 V @ 300 mA
JANTXV1N6631US JANTXV1N6631US

JANTXV1N6631US

DIODE GEN PURP 1.1KV 1.4A D5B

Microchip Technology

3665 25.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 10V, 1MHz 60 ns 4 µA @ 1100 V 1100 V 1.4A -65°C ~ 150°C 1.6 V @ 1.4 A
1N3263R

Таблицы данных

1N3263R

1N3263R

DIODE GEN PURP 200V 160A DO205AB

Powerex Inc.

3143 52.19
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 200 V 200 V 160A -65°C ~ 175°C -
JANS1N5802 JANS1N5802

JANS1N5802

RECTIFIER DIODE

Microchip Technology

2717 32.03
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns - 50 V 2A -65°C ~ 175°C 875 mV @ 1 A
JANTXV1N5308-1

Таблицы данных

JANTXV1N5308-1

JANTXV1N5308-1

DIODE CURRENT REG 100V

Microchip Technology

2159 35.01
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
FR16K05

Таблицы данных

FR16K05

FR16K05

DIODE GEN PURP 800V 16A DO4

GeneSiC Semiconductor

2643 9.35
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 800 V 16A -65°C ~ 150°C 1.1 V @ 16 A
1N5420US/TR 1N5420US/TR

1N5420US/TR

RECTIFIER UFR,FRR

Microchip Technology

2740 9.95
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 400 ns 1 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.5 V @ 9 A
VS-241NQ045PBF

Таблицы данных

VS-241NQ045PBF

VS-241NQ045PBF

DIODE SCHOTTKY 45V 240A D-67

Vishay General Semiconductor - Diodes Division

3768 25.38
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Chassis Mount 14800pF @ 5V, 1MHz - 20 mA @ 45 V 45 V 240A - 800 mV @ 240 A
1N6081US

Таблицы данных

1N6081US

1N6081US

DIODE GEN PURP 150V 2A G-MELF

Microchip Technology

2623 52.23
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 150 V 150 V 2A -65°C ~ 155°C 1.5 V @ 37.7 A
JANS1N5804 JANS1N5804

JANS1N5804

RECTIFIER DIODE

Microchip Technology

3810 32.03
- +

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Расследования

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns - 100 V 2A -65°C ~ 175°C 975 mV @ 2.5 A
JANTXV1N5311-1

Таблицы данных

JANTXV1N5311-1

JANTXV1N5311-1

DIODE CURRENT REG 100V

Microchip Technology

3180 35.01
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
VS-88HF40

Таблицы данных

VS-88HF40

VS-88HF40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2468 9.35
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N5419US/TR 1N5419US/TR

1N5419US/TR

RECTIFIER UFR,FRR

Microchip Technology

2804 9.95
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 250 ns 1 µA @ 500 V 500 V 3A -65°C ~ 175°C 1.5 V @ 9 A
JANTX1N6642UBD JANTX1N6642UBD

JANTX1N6642UBD

DIODE GEN PURP 75V 300MA UB

Microchip Technology

2613 25.41
- +

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Расследования

Bulk Military, MIL-PRF-19500/578 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 20 ns 500 nA @ 75 V 75 V 300mA (DC) -65°C ~ 175°C 1.2 V @ 100 mA
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