Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JANTXV1N5301-1

Таблицы данных

JANTXV1N5301-1

JANTXV1N5301-1

DIODE CURRENT REG 100V

Microchip Technology

2346 35.01
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTX1N5802 JANTX1N5802

JANTX1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

3815 9.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 50 V 50 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTXV1N6638US/TR JANTXV1N6638US/TR

JANTXV1N6638US/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

2036 9.93
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 4.5 ns - 125 V 300mA -65°C ~ 175°C 1.1 V @ 200 mA
VS-T40HFL40S02

Таблицы данных

VS-T40HFL40S02

VS-T40HFL40S02

DIODE GEN PURP 400V 40A D-55

Vishay General Semiconductor - Diodes Division

2738 25.22
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis Mount - 200 ns 100 µA @ 400 V 400 V 40A - -
JAN1N3671A

Таблицы данных

JAN1N3671A

JAN1N3671A

DIODE GEN PURP 800V 12A DO203AA

Microchip Technology

3581 52.13
- +

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Bulk Military, MIL-PRF-19500/260 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 5 µA @ 800 V 800 V 12A -65°C ~ 150°C 1.35 V @ 38 A
1N6078US

Таблицы данных

1N6078US

1N6078US

DIODE GEN PURP 150V 6A D5B

Microchip Technology

3692 32.01
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 5 µA @ 150 V 150 V 6A -65°C ~ 155°C 1.76 V @ 18.8 A
JANTXV1N5303-1

Таблицы данных

JANTXV1N5303-1

JANTXV1N5303-1

DIODE CURRENT REG 100V

Microchip Technology

3717 35.01
- +

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Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
FR12B02

Таблицы данных

FR12B02

FR12B02

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

3507 9.35
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 100 V 12A -65°C ~ 150°C 800 mV @ 12 A
1N6627/TR

Таблицы данных

1N6627/TR

1N6627/TR

RECTIFIER UFR,FRR

Microchip Technology

2385 9.93
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 10V, 1MHz 30 ns 2 µA @ 440 V 440 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
JANTX1N4148UB2R JANTX1N4148UB2R

JANTX1N4148UB2R

DIODE GEN PURP 75V 200MA SMD

Microchip Technology

3406 25.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 200°C 1.2 V @ 100 mA
JAN1N3673A

Таблицы данных

JAN1N3673A

JAN1N3673A

DIODE GEN PURP 800V 12A DO203AA

Microchip Technology

3872 52.13
- +

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Bulk Military, MIL-PRF-19500/260 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 5 µA @ 800 V 800 V 12A -65°C ~ 150°C 1.35 V @ 38 A
1N6079US

Таблицы данных

1N6079US

1N6079US

DIODE GEN PURP 50V 2A G-MELF

Microchip Technology

3145 32.01
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 50 V 50 V 2A -65°C ~ 155°C 1.5 V @ 37.7 A
JANTXV1N5304-1

Таблицы данных

JANTXV1N5304-1

JANTXV1N5304-1

DIODE CURRENT REG 100V

Microchip Technology

2106 35.01
- +

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Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
FR12D02

Таблицы данных

FR12D02

FR12D02

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

3094 9.35
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 200 V 12A -65°C ~ 150°C 800 mV @ 12 A
FFSH20120ADN-F085

Таблицы данных

FFSH20120ADN-F085

FFSH20120ADN-F085

1200V 20A AUTO SIC SBD

onsemi

3155 9.94
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 612pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 15A (DC) -55°C ~ 175°C -
JANTXV1N4148UB2R JANTXV1N4148UB2R

JANTXV1N4148UB2R

DIODE GEN PURP 75V 200MA SMD

Microchip Technology

2492 25.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/116 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 200°C 1.2 V @ 100 mA
UES1105HR2 UES1105HR2

UES1105HR2

RECTIFIER

Microchip Technology

2994 52.16
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns - 300 V 2A - 1.25 V @ 1 A
JANS1N5806 JANS1N5806

JANS1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

3495 32.03
- +

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Расследования

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTXV1N5306-1

Таблицы данных

JANTXV1N5306-1

JANTXV1N5306-1

DIODE CURRENT REG 100V

Microchip Technology

2492 35.01
- +

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Расследования

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
FR12G02

Таблицы данных

FR12G02

FR12G02

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

3975 9.35
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 400 V 12A -65°C ~ 150°C 800 mV @ 12 A
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