Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JANTX1N5804URS

Таблицы данных

JANTX1N5804URS

JANTX1N5804URS

DIODE GEN PURP 100V 1A APKG

Microchip Technology

3693 21.18
- +

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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTX1N5552/TR

Таблицы данных

JANTX1N5552/TR

JANTX1N5552/TR

STD RECTIFIER

Microchip Technology

2113 5.79
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 5A -65°C ~ 175°C 1.2 V @ 9 A
1N5550

Таблицы данных

1N5550

1N5550

DIODE GEN PURP 200V 5A AXIAL

Semtech Corporation

3485 15.97
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 200 V 200 V 5A - 1 V @ 3 A
1N5298-1

Таблицы данных

1N5298-1

1N5298-1

CURRENT REGULATOR DIODE

Microchip Technology

3087 18.93
- +

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Bulk RoHS - - Active - - - - - - - -
VS-85HF80M

Таблицы данных

VS-85HF80M

VS-85HF80M

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2982 19.99
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-50PF40W

Таблицы данных

VS-50PF40W

VS-50PF40W

DIODE GEN PURP 400V 50A DO203AB

Vishay General Semiconductor - Diodes Division

3646 5.31
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 400 V 50A -55°C ~ 180°C 1.4 V @ 125 A
JANTX1N5806URS

Таблицы данных

JANTX1N5806URS

JANTX1N5806URS

DIODE GEN PURP 150V 1A APKG

Microchip Technology

3283 21.18
- +

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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
DHG60I600HA DHG60I600HA

DHG60I600HA

DIODE GEN PURP 600V 60A TO247

IXYS

3479 5.80
- +

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Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 600 V 60A -55°C ~ 150°C -
1N5551

Таблицы данных

1N5551

1N5551

DIODE GEN PURP 400V 5A AXIAL

Semtech Corporation

3545 15.97
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 400 V 400 V 5A - 1 V @ 3 A
1N5305-1

Таблицы данных

1N5305-1

1N5305-1

CURRENT REGULATOR DIODE

Microchip Technology

3287 18.93
- +

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Bulk RoHS - - Active - - - - - - - -
VS-85HFR10M

Таблицы данных

VS-85HFR10M

VS-85HFR10M

DIODE GEN PURP 100V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3799 19.99
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 100 V 85A -65°C ~ 180°C 1.2 V @ 267 A
CDLL1A80

Таблицы данных

CDLL1A80

CDLL1A80

DIODE SCHOTTKY 80V 1A DO213AB

Microchip Technology

3136 5.31
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 1A - 690 mV @ 1 A
UES1302E3 UES1302E3

UES1302E3

RECTIFIER UFR,FRR

Microchip Technology

2281 21.29
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 5 µA @ 100 V 100 V 6A 175°C 925 mV @ 6 A
JAN1N5550

Таблицы данных

JAN1N5550

JAN1N5550

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

3999 5.81
- +

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Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.2 V @ 9 A
1N5552

Таблицы данных

1N5552

1N5552

DIODE GEN PURP 600V 5A AXIAL

Semtech Corporation

3153 15.97
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 600 V 600 V 5A - 1 V @ 3 A
1N5305

Таблицы данных

1N5305

1N5305

CURRENT REGULATOR

Microchip Technology

3765 18.93
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 100 V 2.2A -55°C ~ 175°C 1.85 V @ 1.6 A
VS-85HFR120M

Таблицы данных

VS-85HFR120M

VS-85HFR120M

DIODE GEN PURP 1.2KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

3368 19.99
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
DMA50P1200HB

Таблицы данных

DMA50P1200HB

DMA50P1200HB

POWER DIODE DISCRETES-RECTIFIER

IXYS

3545 5.31
- +

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Расследования

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 19pF @ 400V, 1MHz - 40 µA @ 1200 V 1200 V 50A -55°C ~ 175°C 1.3 V @ 50 A
UES1301/TR UES1301/TR

UES1301/TR

RECTIFIER UFR,FRR

Microchip Technology

3619 21.29
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns - 50 V 6A -55°C ~ 175°C 925 mV @ 6 A
JAN1N5551

Таблицы данных

JAN1N5551

JAN1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

3462 5.81
- +

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Расследования

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.2 V @ 9 A
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