Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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![]() Таблицы данных |
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JAN1N4249D MET 1A STD 800V |
2191 | 15.96 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1 V | 1 V | 1A (DC) | - | 1.2 V @ 1 A | ||
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JANTXV1N6628/TRRECTIFIER UFR,FRR |
2645 | 18.84 |
ДобавитьРасследования |
Tape & Reel (TR) | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 660 V | 660 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | ||
![]() Таблицы данных |
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MUR5020RDIODE GEN PURP REV 200V 50A DO5 |
2653 | 19.88 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 200 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |||
![]() Таблицы данных |
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LSIC2SD065E40CCADIODE SCHOTTKY SIC 650V 20A DUAL |
3329 | 20.92 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 960pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 45A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | ||
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JANTX1N3612/TRHIGH VOLTAGE RECTIFIER |
2689 | 5.75 |
ДобавитьРасследования |
Tape & Reel (TR) | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
![]() Таблицы данных |
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VS-8EWF04STRL-M3DIODE GEN PURP 400V 8A D-PAK |
3454 | 2.02 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |||
![]() Таблицы данных |
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JAN1N5614D MET 1A STD 200V |
3207 | 15.96 |
ДобавитьРасследования |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
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PCFFS20120AFDIODE SCHOTTKY 20A 1200V DIE |
3670 | 18.87 |
ДобавитьРасследования |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.723 V @ 20 A | |||
![]() Таблицы данных |
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MUR5040RDIODE GEN PURP REV 400V 50A DO5 |
2728 | 19.88 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 400 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |||
![]() Таблицы данных |
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JTX1N6073D MET 1.5A SFST 50V HR |
2633 | 21.05 |
ДобавитьРасследования |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
![]() Таблицы данных |
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1N5806USE3/TRUFR,FRR |
2978 | 5.76 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A | |||
![]() Таблицы данных |
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VS-8EWF04STR-M3DIODE GEN PURP 400V 8A D-PAK |
2992 | 2.02 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |||
![]() Таблицы данных |
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JAN1N5615D MET 1A FAST 200V |
2028 | 15.96 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 5V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A | ||
![]() Таблицы данных |
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JANTX1N6622DIODE GEN PURP 660V 2A AXIAL |
3163 | 18.87 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | ||
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PCFFS50120AFDIODE SCHOTTKY 1200V 50A DIE |
3731 | 19.90 |
ДобавитьРасследования |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 50A | 175°C (Max) | 1.75 V @ 50 A | |||
![]() Таблицы данных |
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JANTX1N6074D MET 1.5A SFST 100V HR |
3168 | 21.05 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 5V, 1MHz | 30 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 1.2 V @ 1.5 A | ||
![]() Таблицы данных |
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1N4249/TRRECTIFIER UFR,FRR |
2644 | 5.76 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 1 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |||
![]() Таблицы данных |
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VS-8EWF04STRR-M3DIODE GEN PURP 400V 8A D-PAK |
3716 | 2.02 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |||
![]() Таблицы данных |
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JAN1N5616D MET 1A STD 400V |
2648 | 15.96 |
ДобавитьРасследования |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
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1N6077E3RECTIFIER UFR,FRR |
2091 | 18.90 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 100 V | 100 V | 6A | -65°C ~ 155°C | 1.76 V @ 18.8 A |