Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JAN1N6624U JAN1N6624U

JAN1N6624U

DIODE GEN PURP 900V 1A A-MELF

Microchip Technology

3668 13.65
- +

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Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 500 nA @ 900 V 900 V 1A -65°C ~ 150°C 1.55 V @ 1 A
JANTXV1N5806

Таблицы данных

JANTXV1N5806

JANTXV1N5806

D MET 2.5A SFST 150V HRV 2FFTV

Semtech Corporation

2800 13.01
- +

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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 5V, 1MHz 25 ns 1 µA @ 150 V 150 V 3.3A -65°C ~ 175°C 875 mV @ 1 A
HSM120GE3/TR13 HSM120GE3/TR13

HSM120GE3/TR13

DIODE SCHOTTKY 1A 20V SMBG

Microchip Technology

2996 0.93
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Tape & Reel (TR) RoHS - - Active - - - - - - - -
HSM1100JE3/TR13

Таблицы данных

HSM1100JE3/TR13

HSM1100JE3/TR13

DIODE SCHOTTKY 100V 1A DO214BA

Microchip Technology

2581 2.03
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 1A -55°C ~ 175°C 840 mV @ 1 A
1N6621US

Таблицы данных

1N6621US

1N6621US

DIODE GEN PURP 440V 1.2A A-MELF

Microchip Technology

3918 11.40
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 30 ns 500 nA @ 440 V 440 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
JANTXV1N4248/TR JANTXV1N4248/TR

JANTXV1N4248/TR

RECTIFIER UFR,FRR

Microchip Technology

3844 9.00
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Tape & Reel (TR) Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 3 A
JAN1N6624US JAN1N6624US

JAN1N6624US

DIODE GEN PURP 990V 1A D5A

Microchip Technology

3467 13.65
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Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 50 ns 500 nA @ 990 V 990 V 1A -65°C ~ 150°C 1.55 V @ 1 A
1N5822

Таблицы данных

1N5822

1N5822

DIODE SCHOTTKY 40V 3A AXIAL

Microchip Technology

3805 13.02
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Bulk Military, MIL-PRF-19500/620 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 40 V 40 V 3A -65°C ~ 125°C 500 mV @ 3 A
HSM130GE3/TR13 HSM130GE3/TR13

HSM130GE3/TR13

DIODE SCHOTTKY 1A 30V SMBG

Microchip Technology

2622 0.93
- +

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Tape & Reel (TR) RoHS - - Active - - - - - - - -
1N4531

Таблицы данных

1N4531

1N4531

DIODE GEN PURP 75V 125MA DO34

Microchip Technology

3697 2.03
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Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 20 ns 500 nA @ 75 V 75 V 125mA -65°C ~ 175°C 1.2 V @ 100 mA
VS-70HFL20S02

Таблицы данных

VS-70HFL20S02

VS-70HFL20S02

DIODE GEN PURP 200V 70A DO203AB

Vishay General Semiconductor - Diodes Division

2620 11.42
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 100 µA @ 200 V 200 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
VS-71HF20

Таблицы данных

VS-71HF20

VS-71HF20

DIODE GEN PURP 200V 70A DO203AB

Vishay General Semiconductor - Diodes Division

2008 9.02
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 15 mA @ 200 V 200 V 70A -65°C ~ 180°C 1.35 V @ 220 A
JAN1N6625U JAN1N6625U

JAN1N6625U

DIODE GEN PURP 1KV 1A A-MELF

Microchip Technology

2178 13.65
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Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 1 µA @ 1000 V 1000 V 1A -65°C ~ 150°C 1.75 V @ 1 A
VS-85HFLR60S02

Таблицы данных

VS-85HFLR60S02

VS-85HFLR60S02

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2867 13.06
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 100 µA @ 600 V 600 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
HSM140GE3/TR13 HSM140GE3/TR13

HSM140GE3/TR13

DIODE SCHOTTKY 1A 40V SMBG

Microchip Technology

3802 0.93
- +

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Tape & Reel (TR) RoHS - - Active - - - - - - - -
1N4532

Таблицы данных

1N4532

1N4532

DIODE GEN PURP 50V 125MA DO34

Microchip Technology

2410 2.03
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Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 30 ns 100 nA @ 50 V 50 V 125mA -55°C ~ 175°C 1 V @ 10 mA
VS-70HFL20S05

Таблицы данных

VS-70HFL20S05

VS-70HFL20S05

DIODE GEN PURP 200V 70A DO203AB

Vishay General Semiconductor - Diodes Division

2644 11.42
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 200 V 200 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
VS-71HFR20

Таблицы данных

VS-71HFR20

VS-71HFR20

DIODE GEN PURP 200V 70A DO203AB

Vishay General Semiconductor - Diodes Division

3989 9.02
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 15 mA @ 200 V 200 V 70A -65°C ~ 180°C 1.35 V @ 220 A
JAN1N6625US JAN1N6625US

JAN1N6625US

DIODE GEN PURP 1.1KV 1A D5A

Microchip Technology

2011 13.65
- +

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Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 60 ns 1 µA @ 1100 V 1100 V 1A -65°C ~ 150°C 1.75 V @ 1 A
1N6538/TR 1N6538/TR

1N6538/TR

RECTIFIER UFR,FRR

Microchip Technology

2092 13.07
- +

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Расследования

Tape & Reel (TR) RoHS - - Active - - - - - - - -
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