Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JAN1N6630/TR JAN1N6630/TR

JAN1N6630/TR

RECTIFIER UFR,FRR

Microchip Technology

3366 12.90
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 2 µA @ 900 V 900 V 1.4A -65°C ~ 150°C 1.4 V @ 1.4 A
FESB16CT-E3/45

Таблицы данных

FESB16CT-E3/45

FESB16CT-E3/45

DIODE GEN PURP 150V 16A TO263AB

Vishay General Semiconductor - Diodes Division

2258 0.92
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 175pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 16A -65°C ~ 150°C 975 mV @ 16 A
GATELEAD28134XPSA1 GATELEAD28134XPSA1

GATELEAD28134XPSA1

DUMMY 57

Infineon Technologies

3192 11.30
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Tray RoHS - - Active - - - - - - - -
JANTXV1N5619

Таблицы данных

JANTXV1N5619

JANTXV1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3187 8.97
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Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz 250 ns 500 nA @ 600 V 600 V 1A -65°C ~ 175°C 1.6 V @ 3 A
JAN1N6626US

Таблицы данных

JAN1N6626US

JAN1N6626US

DIODE GEN PURP 220V 1.75A D5B

Microchip Technology

2357 13.65
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Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 10V, 1MHz 30 ns 2 µA @ 220 V 220 V 1.75A -65°C ~ 150°C 1.35 V @ 1.2 A
JANTXV1N5616/TR JANTXV1N5616/TR

JANTXV1N5616/TR

STD RECTIFIER

Microchip Technology

2226 12.90
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Tape & Reel (TR) Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
IDL02G65C5XUMA2

Таблицы данных

IDL02G65C5XUMA2

IDL02G65C5XUMA2

DIODE SCHOTTKY 650V 2A VSON-4

Infineon Technologies

2056 0.61
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Tape & Reel (TR),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 70pF @ 1V, 1MHz 0 ns 35 µA @ 650 V 650 V 2A (DC) -55°C ~ 175°C 1.7 V @ 2 A
VS-8EWF10STR-M3

Таблицы данных

VS-8EWF10STR-M3

VS-8EWF10STR-M3

DIODE GEN PURP 1KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3604 2.02
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 270 ns 100 µA @ 1000 V 1000 V 8A -40°C ~ 150°C 1.3 V @ 8 A
JANTX1N6620

Таблицы данных

JANTX1N6620

JANTX1N6620

DIODE GEN PURP 220V 2A AXIAL

Microchip Technology

3851 11.33
- +

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Расследования

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 10V, 1MHz 30 ns 500 nA @ 220 V 220 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
VS-40HFL60S05

Таблицы данных

VS-40HFL60S05

VS-40HFL60S05

DIODE GEN PURP 600V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2441 8.98
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 600 V 600 V 40A -40°C ~ 125°C 1.95 V @ 40 A
JAN1N6073

Таблицы данных

JAN1N6073

JAN1N6073

DIODE GEN PURP 50V 850MA AXIAL

Microchip Technology

2655 13.65
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Расследования

Bulk Military, MIL-PRF-19500/503 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 50 V 50 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
VS-70HFLR80S05

Таблицы данных

VS-70HFLR80S05

VS-70HFLR80S05

DIODE GEN PURP 800V 70A DO203AB

Vishay General Semiconductor - Diodes Division

3951 12.94
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 800 V 800 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
VS-15ETU12HN3

Таблицы данных

VS-15ETU12HN3

VS-15ETU12HN3

DIODE GEN PURP 1.2KV 15A TO220AC

Vishay General Semiconductor - Diodes Division

3790 0.92
- +

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Расследования

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 167 ns 80 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 2.78 V @ 15 A
VS-8EWF10STRR-M3

Таблицы данных

VS-8EWF10STRR-M3

VS-8EWF10STRR-M3

DIODE GEN PURP 1KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3098 2.02
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 270 ns 100 µA @ 1000 V 1000 V 8A -40°C ~ 150°C 1.3 V @ 8 A
PCFFS5065AF PCFFS5065AF

PCFFS5065AF

DIODE SCHOTTKY 650V 50A DIE

onsemi

2120 11.35
- +

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Расследования

Tray RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 2530pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 60A (DC) -55°C ~ 175°C 1.75 V @ 50 A
VS-40HFLR60S05

Таблицы данных

VS-40HFLR60S05

VS-40HFLR60S05

DIODE GEN PURP 600V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3304 8.98
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 600 V 600 V 40A -40°C ~ 125°C 1.95 V @ 40 A
JAN1N6621U JAN1N6621U

JAN1N6621U

DIODE GEN PURP 400V 1.2A A-MELF

Microchip Technology

2160 13.65
- +

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Расследования

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 500 nA @ 400 V 400 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
JANTXV1N3595US JANTXV1N3595US

JANTXV1N3595US

ZENER DIODE

WEC

2342 20.12
- +

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Расследования

Bulk,Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 3 µs - 125 V 4A -65°C ~ 150°C 1 V @ 200 mA
VS-15ETH03SHM3

Таблицы данных

VS-15ETH03SHM3

VS-15ETH03SHM3

RECTIFIER HYPERFAST 15A TO-263AB

Vishay General Semiconductor - Diodes Division

2889 0.92
- +

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Расследования

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 40 µA @ 300 V 300 V 15A -55°C ~ 175°C 1.25 V @ 15 A
VS-8EWF12STRL-M3

Таблицы данных

VS-8EWF12STRL-M3

VS-8EWF12STRL-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3965 2.02
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 270 ns 100 µA @ 1200 V 1200 V 8A -40°C ~ 150°C 1.3 V @ 8 A
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