Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-12EWH06FNTRL-M3

Таблицы данных

VS-12EWH06FNTRL-M3

VS-12EWH06FNTRL-M3

DIODE GEN PURPOSE 600V 12A DPAK

Vishay General Semiconductor - Diodes Division

2053 0.56
- +

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Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 600 V 600 V 12A -40°C ~ 150°C 2.5 V @ 12 A
JAN1N5554/TR

Таблицы данных

JAN1N5554/TR

JAN1N5554/TR

STD RECTIFIER

Microchip Technology

3358 7.37
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 1 V 1000 V 3A -65°C ~ 175°C 1.3 V @ 9 A
1N5619E3/TR 1N5619E3/TR

1N5619E3/TR

STD RECTIFIER

Microchip Technology

2634 4.94
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz - 500 µA @ 400 V 600 V 1A -65°C ~ 200°C 1.6 V @ 3 A
VI20120S-M3/4W

Таблицы данных

VI20120S-M3/4W

VI20120S-M3/4W

DIODE SCHOTTKY 20A 120V TO-262AA

Vishay General Semiconductor - Diodes Division

3096 0.61
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 300 µA @ 120 V 120 V 20A -40°C ~ 150°C 1.12 V @ 20 A
MSC010SDA170B

Таблицы данных

MSC010SDA170B

MSC010SDA170B

DIODE SCHOTTKY 1700V TO-247

Microchip Technology

3579 7.76
- +

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Tube RoHS - - Active - - - - - - - -
VS-12EWH06FNTR-M3

Таблицы данных

VS-12EWH06FNTR-M3

VS-12EWH06FNTR-M3

DIODE GEN PURPOSE 600V 12A DPAK

Vishay General Semiconductor - Diodes Division

2606 0.56
- +

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Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 600 V 600 V 12A -65°C ~ 175°C 2.5 V @ 12 A
1N3673AR

Таблицы данных

1N3673AR

1N3673AR

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor

3469 7.39
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N5811US/TR

Таблицы данных

1N5811US/TR

1N5811US/TR

UFR,FRR

Microchip Technology

2293 6.56
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 10V, 1MHz 30 ns 5 µA @ 150 V 150 V 3A -65°C ~ 175°C 875 mV @ 4 A
JAN1N5552

Таблицы данных

JAN1N5552

JAN1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

3646 4.95
- +

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Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.2 V @ 9 A
NRVB1240MFST1G

Таблицы данных

NRVB1240MFST1G

NRVB1240MFST1G

DIODE SCHOTTKY 40V 12A 5DFN

onsemi

3351 0.61
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 12A -55°C ~ 150°C 680 mV @ 12 A
VS-40HFR140

Таблицы данных

VS-40HFR140

VS-40HFR140

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

3816 7.77
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 40A -65°C ~ 160°C 1.5 V @ 125 A
VS-12EWH06FNTRR-M3

Таблицы данных

VS-12EWH06FNTRR-M3

VS-12EWH06FNTRR-M3

DIODE GEN PURPOSE 600V 12A DPAK

Vishay General Semiconductor - Diodes Division

3026 0.56
- +

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Расследования

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 26 ns 10 µA @ 600 V 600 V 12A -65°C ~ 175°C 2.5 V @ 12 A
JANTX1N6642/TR JANTX1N6642/TR

JANTX1N6642/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

3683 7.40
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/578 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 5pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 300mA -65°C ~ 175°C 1.2 V @ 100 mA
1N5623E3/TR 1N5623E3/TR

1N5623E3/TR

STD RECTIFIER

Microchip Technology

3339 6.57
- +

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Tape & Reel (TR) RoHS - - Active - - - - - - - -
1N1202AR

Таблицы данных

1N1202AR

1N1202AR

DIODE GEN PURP REV 200V 12A DO5

GeneSiC Semiconductor

3646 4.96
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
NRVB1240MFST3G

Таблицы данных

NRVB1240MFST3G

NRVB1240MFST3G

DIODE SCHOTTKY 40V 12A 5DFN

onsemi

2211 0.61
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 12A -55°C ~ 150°C 680 mV @ 12 A
60SPB045A

Таблицы данных

60SPB045A

60SPB045A

DIODE SCHOTTKY 45V 60A SPD-2A

SMC Diode Solutions

2119 7.77
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 2400pF @ 5V, 1MHz - 4.5 mA @ 45 V 45 V 60A -55°C ~ 150°C 600 mV @ 60 A
RL 4Z

Таблицы данных

RL 4Z

RL 4Z

DIODE GEN PURP 200V 3.5A AXIAL

Sanken

2972 0.56
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 150 µA @ 200 V 200 V 3.5A -40°C ~ 150°C 950 mV @ 3.5 A
JAN1N5623

Таблицы данных

JAN1N5623

JAN1N5623

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

3961 7.41
- +

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Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 500 ns 500 nA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-80PF160W

Таблицы данных

VS-80PF160W

VS-80PF160W

DIODE GEN PURP 1.6KV 80A DO203AB

Vishay General Semiconductor - Diodes Division

3449 6.59
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 1600 V 80A -55°C ~ 150°C 1.46 V @ 220 A
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