Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-20TQ045THN3

Таблицы данных

VS-20TQ045THN3

VS-20TQ045THN3

SCHOTTKY - TO-220

Vishay General Semiconductor - Diodes Division

2569 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 1400pF @ 5V, 1MHz - 2.7 mA @ 45 V 45 V 20A -55°C ~ 150°C 570 mV @ 20 A
RFVS8TJ6SGC9

Таблицы данных

RFVS8TJ6SGC9

RFVS8TJ6SGC9

DIODE GEN PURP 600V 8A TO220ACFP

Rohm Semiconductor

935 1.23
- +

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Расследования

Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 3 V @ 8 A
JANTX1N5553

Таблицы данных

JANTX1N5553

JANTX1N5553

DIODE GEN PURP 800V 5A AXIAL

Microchip Technology

2005 7.35
- +

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Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 5A -65°C ~ 175°C 1.3 V @ 9 A
JANTX1N5618/TR JANTX1N5618/TR

JANTX1N5618/TR

STD RECTIFIER

Microchip Technology

2319 4.90
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 200°C 1.3 V @ 3 A
VS-20TQ035THN3

Таблицы данных

VS-20TQ035THN3

VS-20TQ035THN3

SCHOTTKY - TO-220

Vishay General Semiconductor - Diodes Division

3578 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 1400pF @ 5V, 1MHz - 2.7 mA @ 35 V 35 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-6TQ040S-M3

Таблицы данных

VS-6TQ040S-M3

VS-6TQ040S-M3

DIODE SCHOTTKY 40V 6A TO263AB

Vishay General Semiconductor - Diodes Division

2934 0.56
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 800 µA @ 40 V 40 V 6A -55°C ~ 175°C 600 mV @ 6 A
JANTX1N5616US

Таблицы данных

JANTX1N5616US

JANTX1N5616US

DIODE GEN PURP 400V 1A D5A

Microchip Technology

3935 7.35
- +

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Расследования

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JAN1N4942/TR

Таблицы данных

JAN1N4942/TR

JAN1N4942/TR

RECTIFIER UFR,FRR

Microchip Technology

2875 4.90
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/359 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
VS-15TQ060SHM3

Таблицы данных

VS-15TQ060SHM3

VS-15TQ060SHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

2569 0.61
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 720pF @ 5V, 1MHz - 800 µA @ 60 V 60 V 15A -55°C ~ 150°C 620 mV @ 15 A
1N6857-1/TR 1N6857-1/TR

1N6857-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2219 7.75
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 4.5pF @ 0V, 1MHz - 150 nA @ 16 V 20 V 150mA -65°C ~ 150°C 750 mV @ 35 mA
VS-MBRB735-M3

Таблицы данных

VS-MBRB735-M3

VS-MBRB735-M3

DIODE SCHOTTKY 35V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division

3388 0.56
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 100 µA @ 35 V 35 V 7.5A -65°C ~ 150°C 570 mV @ 7.5 A
CD5821

Таблицы данных

CD5821

CD5821

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2286 7.35
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 30 V 30 V 3A -65°C ~ 125°C 550 mV @ 3 A
VS-50PF80W

Таблицы данных

VS-50PF80W

VS-50PF80W

DIODE GEN PURP 800V 50A DO203AB

Vishay General Semiconductor - Diodes Division

3262 4.92
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 800 V 50A -55°C ~ 180°C 1.4 V @ 125 A
VS-20TQ040THN3

Таблицы данных

VS-20TQ040THN3

VS-20TQ040THN3

SCHOTTKY - TO-220

Vishay General Semiconductor - Diodes Division

3454 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 1400pF @ 5V, 1MHz - 2.7 mA @ 40 V 40 V 20A -55°C ~ 150°C 570 mV @ 20 A
CDLL5818E3/TR

Таблицы данных

CDLL5818E3/TR

CDLL5818E3/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3486 7.75
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 0.9pF @ 5V, 1MHz - 100 µA @ 30 V 30 V 1A - 600 mV @ 1 A
VS-6TQ035S-M3

Таблицы данных

VS-6TQ035S-M3

VS-6TQ035S-M3

DIODE SCHOTTKY 35V 6A TO263AB

Vishay General Semiconductor - Diodes Division

3065 0.56
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 800 µA @ 35 V 35 V 6A -55°C ~ 175°C 600 mV @ 6 A
JAN1N5553/TR

Таблицы данных

JAN1N5553/TR

JAN1N5553/TR

STD RECTIFIER

Microchip Technology

2870 7.37
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.3 V @ 9 A
VS-50PFR80W

Таблицы данных

VS-50PFR80W

VS-50PFR80W

DIODE GEN PURP 800V 50A DO203AB

Vishay General Semiconductor - Diodes Division

3152 4.92
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 800 V 50A -55°C ~ 180°C 1.4 V @ 125 A
V20100SG-M3/4W

Таблицы данных

V20100SG-M3/4W

V20100SG-M3/4W

DIODE SCHOTTKY 20A 100V TO-220AB

Vishay General Semiconductor - Diodes Division

3152 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 350 µA @ 100 V 100 V 20A -40°C ~ 150°C 1.07 V @ 20 A
1N5819UR-1E3 1N5819UR-1E3

1N5819UR-1E3

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2301 7.75
- +

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Расследования

Bulk Military, MIL-PRF-19500/586 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
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