Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-20ETS12FP-M3 VS-20ETS12FP-M3

VS-20ETS12FP-M3

DIODE GEN PURP 1.2KV 20A TO220FP

Vishay General Semiconductor - Diodes Division

3813 1.72
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 95 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
BYW75TR

Таблицы данных

BYW75TR

BYW75TR

DIODE AVALANCHE 500V 3A SOD64

Vishay General Semiconductor - Diodes Division

3471 0.54
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 500 V 500 V 3A -55°C ~ 175°C 1.1 V @ 3 A
1N6677-1E3/TR 1N6677-1E3/TR

1N6677-1E3/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3916 3.93
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Tape & Reel (TR) Military, MIL-PRF-19500/610 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 50pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
APT30D120SG

Таблицы данных

APT30D120SG

APT30D120SG

DIODE ULT FAST 30A 1200V D3PAK

Microchip Technology

3165 2.99
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 370 ns 250 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.5 V @ 30 A
UPS360E3/TR13

Таблицы данных

UPS360E3/TR13

UPS360E3/TR13

DIODE SCHOTTKY 60V 3A POWERMITE3

Microchip Technology

2076 0.59
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 4V, 1MHz - 200 µA @ 60 V 60 V 3A -55°C ~ 125°C 630 mV @ 3.5 A
VS-12FR80

Таблицы данных

VS-12FR80

VS-12FR80

DIODE GEN PURP 800V 12A DO203AA

Vishay General Semiconductor - Diodes Division

2889 4.30
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 800 V 800 V 12A -65°C ~ 175°C 1.26 V @ 38 A
ISL9R1560S3ST

Таблицы данных

ISL9R1560S3ST

ISL9R1560S3ST

DIODE GEN PURP 600V 15A TO263-2

onsemi

2214 1.72
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - 40 ns 100 µA @ 600 V 600 V 15A -55°C ~ 175°C 2.2 V @ 15 A
BYW85TR

Таблицы данных

BYW85TR

BYW85TR

DIODE AVALANCHE 800V 3A SOD64

Vishay General Semiconductor - Diodes Division

2402 0.54
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 60pF @ 4V, 1MHz 7.5 µs 1 µA @ 800 V 800 V 3A -55°C ~ 175°C 1 V @ 3 A
1N6677-1/TR 1N6677-1/TR

1N6677-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3371 3.93
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Tape & Reel (TR) Military, MIL-PRF-19500/610 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 50pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
IDK09G65C5XTMA2

Таблицы данных

IDK09G65C5XTMA2

IDK09G65C5XTMA2

DIODE SCHOTTKY 650V 9A TO263-2

Infineon Technologies

3648 2.99
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Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 270pF @ 1V, 1MHz 0 ns 1.6 mA @ 650 V 650 V 9A (DC) -55°C ~ 175°C 1.8 V @ 9 A
FRQS20A065

Таблицы данных

FRQS20A065

FRQS20A065

DIODE SCHOTTKY 65V 20A TO-220 FU

KYOCERA AVX

2125 0.59
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 65 V 65 V 20A -40°C ~ 150°C 630 mV @ 10 A
1N483BUR

Таблицы данных

1N483BUR

1N483BUR

DIODE GEN PURP 225V 50MA DO213AA

Microchip Technology

3683 4.31
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Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 25 nA @ 225 V 225 V 50mA -65°C ~ 175°C 1 V @ 100 mA
DMA10P1600PZ-TRL

Таблицы данных

DMA10P1600PZ-TRL

DMA10P1600PZ-TRL

POWER DIODE DISCRETES-RECTIFIER

IXYS

2039 1.73
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 400V, 1MHz - 10 µA @ 1600 V 1600 V 10A -55°C ~ 175°C 1.26 V @ 10 A
SF5401-TAP

Таблицы данных

SF5401-TAP

SF5401-TAP

DIODE GEN PURP 100V 3A SOD64

Vishay General Semiconductor - Diodes Division

3144 0.54
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 1.1 V @ 1 A
IDH09SG60CXKSA2

Таблицы данных

IDH09SG60CXKSA2

IDH09SG60CXKSA2

DIODE SCHOTTKY 600V 9A TO220-2

Infineon Technologies

3606 3.93
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Расследования

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 280pF @ 1V, 1MHz 0 ns 80 µA @ 600 V 600 V 9A (DC) -55°C ~ 175°C 2.1 V @ 9 A
JANTXV1N4148UR-1/TR JANTXV1N4148UR-1/TR

JANTXV1N4148UR-1/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

2599 3.02
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Tape & Reel (TR) Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 25 nA @ 20 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 100 mA
VIT2080S-E3/4W

Таблицы данных

VIT2080S-E3/4W

VIT2080S-E3/4W

DIODE SCHOTTKY 20A 80V TO-262AA

Vishay General Semiconductor - Diodes Division

2175 0.59
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 700 µA @ 80 V 80 V 20A -55°C ~ 150°C 920 mV @ 20 A
1N485BUR

Таблицы данных

1N485BUR

1N485BUR

DIODE GEN PURP 180V 100MA DO213

Microchip Technology

3077 4.31
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Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 25 nA @ 180 V 180 V 100mA (DC) -65°C ~ 175°C 1 V @ 100 mA
DAA10EM1800PZ-TRL

Таблицы данных

DAA10EM1800PZ-TRL

DAA10EM1800PZ-TRL

POWER DIODE DISCRETES-RECTIFIER

IXYS

2859 1.73
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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 4pF @ 400V, 1MHz - 10 µA @ 1800 V 1800 V 10A -55°C ~ 175°C 1.21 V @ 10 A
SF5401-TR

Таблицы данных

SF5401-TR

SF5401-TR

DIODE GEN PURP 100V 3A SOD64

Vishay General Semiconductor - Diodes Division

3066 0.54
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 1.1 V @ 3 A
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