Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR304HR0G

Таблицы данных

SR304HR0G

SR304HR0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

2059 0.16
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 550 mV @ 3 A
V15P8HM3_A/H

Таблицы данных

V15P8HM3_A/H

V15P8HM3_A/H

DIODE SCHOTTKY 80V 15A TO277A

Vishay General Semiconductor - Diodes Division

3185 0.45
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Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.2 mA @ 80 V 80 V 15A -40°C ~ 150°C 660 mV @ 15 A
RU 3V

Таблицы данных

RU 3V

RU 3V

DIODE GEN PURP 400V 1.5A AXIAL

Sanken

3749 0.29
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 400 V 400 V 1.5A -40°C ~ 150°C 1.5 V @ 1.5 A
RU 3V1

Таблицы данных

RU 3V1

RU 3V1

DIODE GEN PURP 400V 1.5A AXIAL

Sanken

3190 0.32
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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 400 V 400 V 1.5A -40°C ~ 150°C 1.5 V @ 1.5 A
GI1-1400GP-E3/54

Таблицы данных

GI1-1400GP-E3/54

GI1-1400GP-E3/54

DIODE GEN PURP 1.4KV 1A DO204AC

Vishay General Semiconductor - Diodes Division

2701 0.33
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Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 1400 V 1400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
ER3M-TP

Таблицы данных

ER3M-TP

ER3M-TP

DIODE GEN PURP 1KV 3A DO214AB

Micro Commercial Co

3935 0.48
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V 1000 V 3A -50°C ~ 175°C 1.7 V @ 3 A
SR306HR0G

Таблицы данных

SR306HR0G

SR306HR0G

DIODE SCHOTTKY 60V 3A DO201AD

Taiwan Semiconductor Corporation

3573 0.16
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 700 mV @ 3 A
SS12P2L-M3/87A

Таблицы данных

SS12P2L-M3/87A

SS12P2L-M3/87A

DIODE SCHOTTKY 20V 12A TO277A

Vishay General Semiconductor - Diodes Division

2062 0.45
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Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 930pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 12A -55°C ~ 150°C 560 mV @ 12 A
AG01AV1

Таблицы данных

AG01AV1

AG01AV1

DIODE GEN PURP 600V 500MA AXIAL

Sanken

3748 0.38
- +

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Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 100 µA @ 600 V 600 V 500mA -40°C ~ 150°C 1.8 V @ 600 mA
BY203-12STAP

Таблицы данных

BY203-12STAP

BY203-12STAP

DIODE AVALANCH 1.2KV 250MA SOD57

Vishay General Semiconductor - Diodes Division

3589 0.32
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 2 µA @ 700 V 1200 V 250mA (DC) -55°C ~ 150°C 2.4 V @ 200 mA
NRVB8H100MFST3G

Таблицы данных

NRVB8H100MFST3G

NRVB8H100MFST3G

DIODE SCHOTTKY 100V 8A 5DFN

onsemi

3757 0.33
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 2 µA @ 100 V 100 V 8A -55°C ~ 175°C 900 mV @ 8 A
RM 1AV

Таблицы данных

RM 1AV

RM 1AV

DIODE GEN PURP 600V 1A AXIAL

Sanken

2020 0.17
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 600 V 600 V 1A -40°C ~ 150°C 950 mV @ 1 A
S5K V6G

Таблицы данных

S5K V6G

S5K V6G

DIODE GEN PURP 800V 5A DO214AB

Taiwan Semiconductor Corporation

2831 0.16
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 5A -55°C ~ 150°C -
SS12P3L-M3/87A

Таблицы данных

SS12P3L-M3/87A

SS12P3L-M3/87A

DIODE SCHOTTKY 30V 12A TO277A

Vishay General Semiconductor - Diodes Division

2092 0.45
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 930pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 12A -55°C ~ 150°C 560 mV @ 12 A
ES01FV1

Таблицы данных

ES01FV1

ES01FV1

DIODE GEN PURP 1.5KV 500MA AXIAL

Sanken

3273 0.41
- +

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Расследования

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 1500 V 1500 V 500mA -40°C ~ 150°C 2 V @ 500 mA
SE100PWBHM3/I

Таблицы данных

SE100PWBHM3/I

SE100PWBHM3/I

DIODE GEN PURP 100V 10A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3966 0.33
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 78pF @ 4V, 1MHz 2.6 µs 20 µA @ 100 V 100 V 10A -55°C ~ 175°C 1.14 V @ 10 A
RM 1V

Таблицы данных

RM 1V

RM 1V

DIODE GEN PURP 400V 1A AXIAL

Sanken

3555 0.17
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 400 V 400 V 1A -40°C ~ 150°C 950 mV @ 1 A
S5M V6G

Таблицы данных

S5M V6G

S5M V6G

DIODE GEN PURP 5A DO214AB

Taiwan Semiconductor Corporation

3879 0.16
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V - 5A -55°C ~ 150°C -
SS12P2LHM3_A/H

Таблицы данных

SS12P2LHM3_A/H

SS12P2LHM3_A/H

DIODE SCHOTTKY 20V 12A TO277A

Vishay General Semiconductor - Diodes Division

2728 0.45
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 930pF @ 4V, 1MHz - 1000 µA @ 20 V 20 V 12A -55°C ~ 150°C 560 mV @ 12 A
BYT51K-TAP

Таблицы данных

BYT51K-TAP

BYT51K-TAP

DIODE AVALANCHE 800V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

2004 0.29
- +

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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 800 V 800 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
Total 48193 Records«Prev1... 691692693694695696697698...2410Next»
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