Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SS56BF-HFDIODE SCHOTTKY 5A 60V SMBF |
3293 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |||
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Таблицы данных |
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SBYV27-100-E3/73DIODE GEN PURP 100V 2A DO204AC |
2003 | 0.16 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |||
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Таблицы данных |
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GP10T-E3/73DIODE GEN PURP 1.3KV 1A DO204AL |
2133 | 0.00 |
ДобавитьРасследования |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | ||
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Таблицы данных |
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RF 1BVDIODE GEN PURP 800V 600MA AXIAL |
2657 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 800 V | 800 V | 600mA | -40°C ~ 150°C | 2 V @ 1 A | |||
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Таблицы данных |
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SJPB-H4DIODE SCHOTTKY 40V 2A SJP |
2888 | 0.26 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |||
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Таблицы данных |
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AU02ZDIODE GEN PURP 200V 800MA AXIAL |
2468 | 0.32 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |||
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Таблицы данных |
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SS54BF-HFDIODE SCHOTTKY 5A 40V SMBF |
3675 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |||
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Таблицы данных |
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SBYV27-150-E3/73DIODE GEN PURP 150V 2A DO204AC |
2971 | 0.16 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |||
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Таблицы данных |
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GP10M-E3/73DIODE GEN PURP 1KV 1A DO204AL |
3831 | 0.00 |
ДобавитьРасследования |
Cut Tape (CT),Digi-Reel®,Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | ||
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Таблицы данных |
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RH 1CVDIODE GEN PURP 1KV 600MA AXIAL |
2240 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 1000 V | 1000 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |||
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Таблицы данных |
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SJPB-H6DIODE SCHOTTKY 60V 2A SJP |
3708 | 0.26 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 690 mV @ 2 A | |||
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Таблицы данных |
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EM2BDIODE GEN PURP 800V 1.2A AXIAL |
3822 | 0.32 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |||
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Таблицы данных |
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NRVS3GBSR SMB GPPN 3A 400V |
3983 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
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Таблицы данных |
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SBYV27-50-E3/73DIODE GEN PURP 50V 2A DO204AC |
2451 | 0.16 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |||
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Таблицы данных |
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V15P45HM3_A/HDIODE SCHOTTKY 45V 15A TO277A |
2304 | 0.45 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 15A (DC) | -40°C ~ 150°C | 580 mV @ 15 A | ||
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Таблицы данных |
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RM 10AVDIODE GEN PURP 600V 1.2A AXIAL |
2168 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |||
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Таблицы данных |
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SJPB-H9DIODE SCHOTTKY 90V 2A SJP |
3928 | 0.26 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 90 V | 90 V | 2A | -40°C ~ 150°C | 850 mV @ 2 A | |||
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Таблицы данных |
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ES01FDIODE GEN PURP 1.5KV 500MA AXIAL |
3135 | 0.32 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1500 V | 1500 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |||
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Таблицы данных |
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S5A-E3/9ATDIODE GEN PURP 50V 5A DO214AB |
3890 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |||
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Таблицы данных |
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UG2A-E3/73DIODE GEN PURP 50V 2A DO204AC |
2048 | 0.16 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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