Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BYT52A-TAPDIODE AVALANCHE 50V 1.4A SOD57 |
2005 | 0.26 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 50 V | 50 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |||
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Таблицы данных |
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SK84C V6GDIODE SCHOTTKY 8A 40V DO-214AB |
2834 | 0.28 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | - | |||
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Таблицы данных |
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ESH2B M4GDIODE GEN PURP 100V 2A DO214AA |
2156 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |||
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Таблицы данных |
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AS4PG-M3/87ADIODE AVALANCHE 400V 2.4A TO277A |
2275 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A | ||
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Таблицы данных |
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EM2DIODE GEN PURP 400V 1.2A AXIAL |
2906 | 0.30 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |||
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Таблицы данных |
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EGL34FHE3_A/HDIODE GEN PURP 300V 500MA DO213 |
3708 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA | ||
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Таблицы данных |
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BYT52B-TAPDIODE AVALANCHE 100V 1.4A SOD57 |
3819 | 0.26 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 100 V | 100 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |||
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Таблицы данных |
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SK86C V6GDIODE SCHOTTKY 8A 60V DO-214AB |
3972 | 0.28 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | - | |||
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Таблицы данных |
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AS4PJ-M3/87ADIODE AVALANCHE 600V 2.4A TO277A |
2403 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A | ||
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Таблицы данных |
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EM2ADIODE GEN PURP 600V 1.2A AXIAL |
2100 | 0.30 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |||
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Таблицы данных |
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EGL34GHE3_A/HDIODE GEN PURP 400V 500MA DO213 |
3290 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA | ||
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Таблицы данных |
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BYT54A-TAPDIODE AVALANCHE 50V 1.25A SOD57 |
2152 | 0.26 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 50 V | 50 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |||
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Таблицы данных |
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V10PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 |
2890 | 0.28 |
ДобавитьРасследования |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A | ||
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Таблицы данных |
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AS3PM-M3/86ADIODE AVALANCHE 1KV 2.1A TO277 |
3993 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A | ||
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Таблицы данных |
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RM 11AV1DIODE GEN PURP 600V 1.2A AXIAL |
3296 | 0.30 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |||
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Таблицы данных |
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CDBA140LL-GDIODE SCHOTTKY 40V 1A DO214AC |
2502 | 0.17 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -20°C ~ 80°C | 340 mV @ 1 A | |||
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Таблицы данных |
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CMH04(TE12L,Q,M)DIODE GEN PURP 200V 1A MFLAT |
2619 | 0.14 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |||
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Таблицы данных |
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BYT54B-TAPDIODE AVALANCHE 100V 1.25A SOD57 |
3590 | 0.26 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 100 V | 100 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |||
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Таблицы данных |
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SGL41-50HE3/97DIODE SCHOTTKY 50V 1A DO213AB |
2091 | 0.28 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |||
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Таблицы данных |
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AS3PK-M3/86ADIODE AVALANCHE 800V 2.1A TO277A |
3689 | 0.30 |
ДобавитьРасследования |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
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