Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
NRVB5100MFST3G

Таблицы данных

NRVB5100MFST3G

NRVB5100MFST3G

DIODE SCHOTTKY 100V 5A 5DFN

onsemi

3800 0.24
- +

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Расследования

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 µA @ 100 V 100 V 5A -55°C ~ 175°C 980 mV @ 5 A
EGL34AHE3_A/H

Таблицы данных

EGL34AHE3_A/H

EGL34AHE3_A/H

DIODE GEN PURP 50V 500MA DO213AA

Vishay General Semiconductor - Diodes Division

3298 0.14
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
MUR440-M3/73

Таблицы данных

MUR440-M3/73

MUR440-M3/73

DIODE GEN PURP 400V 4A DO201AD

Vishay General Semiconductor - Diodes Division

3090 0.26
- +

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Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 400 V 400 V 4A -65°C ~ 175°C 1.28 V @ 4 A
MUR460SH MUR460SH

MUR460SH

DIODE GEN PURP 600V 4A DO214AB

Taiwan Semiconductor Corporation

3557 0.28
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A (DC) -55°C ~ 175°C 1.25 V @ 4 A
ES2DV M4G

Таблицы данных

ES2DV M4G

ES2DV M4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

2513 0.14
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
AS3PK-M3/87A

Таблицы данных

AS3PK-M3/87A

AS3PK-M3/87A

DIODE AVALANCHE 800V 2.1A TO277A

Vishay General Semiconductor - Diodes Division

3895 0.30
- +

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Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 800 V 800 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
MURS460-M3/H

Таблицы данных

MURS460-M3/H

MURS460-M3/H

4A 600V 50NS FSMC UF RECT SMD

Vishay General Semiconductor - Diodes Division

3935 0.30
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 10 µA @ 600 V 600 V 2.4A -55°C ~ 175°C 1.25 V @ 3 A
EGL34BHE3_A/H

Таблицы данных

EGL34BHE3_A/H

EGL34BHE3_A/H

DIODE GEN PURP 100V 500MA DO213

Vishay General Semiconductor - Diodes Division

3989 0.14
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
BY527TAP

Таблицы данных

BY527TAP

BY527TAP

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

2142 0.26
- +

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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 16pF @ 4V, 1MHz 4 µs 1 µA @ 800 V 800 V 2A -55°C ~ 175°C 1.65 V @ 10 A
MUR440SH MUR440SH

MUR440SH

DIODE GEN PURP 400V 4A DO214AB

Taiwan Semiconductor Corporation

2743 0.28
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A (DC) -55°C ~ 175°C 1.25 V @ 4 A
ES2F M4G

Таблицы данных

ES2F M4G

ES2F M4G

DIODE GEN PURP 300V 2A DO214AA

Taiwan Semiconductor Corporation

3290 0.14
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
AS3PM-M3/87A

Таблицы данных

AS3PM-M3/87A

AS3PM-M3/87A

DIODE AVALANCHE 1KV 2.1A TO277

Vishay General Semiconductor - Diodes Division

2219 0.30
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 1000 V 1000 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
MURS460-M3/I

Таблицы данных

MURS460-M3/I

MURS460-M3/I

4A 600V 50NS FSMC UF RECT SMD

Vishay General Semiconductor - Diodes Division

3227 0.30
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 10 µA @ 600 V 600 V 2.4A -55°C ~ 175°C 1.25 V @ 3 A
EGL34CHE3_A/H

Таблицы данных

EGL34CHE3_A/H

EGL34CHE3_A/H

DIODE GEN PURP 150V 500MA DO213

Vishay General Semiconductor - Diodes Division

3477 0.14
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
BYT51D-TAP

Таблицы данных

BYT51D-TAP

BYT51D-TAP

DIODE AVALANCHE 200V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3705 0.26
- +

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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 200 V 200 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
SK83C V6G

Таблицы данных

SK83C V6G

SK83C V6G

DIODE SCHOTTKY 8A 30V DO-214AB

Taiwan Semiconductor Corporation

2092 0.28
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 8A -55°C ~ 125°C -
ES2G M4G

Таблицы данных

ES2G M4G

ES2G M4G

DIODE GEN PURP 400V 2A DO214AA

Taiwan Semiconductor Corporation

3345 0.14
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
AS4PD-M3/87A

Таблицы данных

AS4PD-M3/87A

AS4PD-M3/87A

DIODE AVALANCHE 200V 2.4A TO277A

Vishay General Semiconductor - Diodes Division

2450 0.30
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 60pF @ 4V, 1MHz 1.8 µs 10 µA @ 200 V 200 V 2.4A (DC) -55°C ~ 175°C 962 mV @ 2 A
EG01C

Таблицы данных

EG01C

EG01C

DIODE GEN PURP 1KV 500MA AXIAL

Sanken

2216 0.30
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 50 µA @ 1000 V 1000 V 500mA -40°C ~ 150°C 3.3 V @ 500 mA
EGL34DHE3_A/H

Таблицы данных

EGL34DHE3_A/H

EGL34DHE3_A/H

DIODE GEN PURP 200V 500MA DO213

Vishay General Semiconductor - Diodes Division

3731 0.14
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
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