Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	VS-ETH0806-M3 DIODE GEN PURP 600V 8A TO220-2 Vishay General Semiconductor - Diodes Division	829	1.16	- + Добавить Расследования	Bulk	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	21 ns	12 µA @ 600 V	600 V	8A	-65°C ~ 175°C	2.65 V @ 8 A
Таблицы данных	S5G_R1_00001 SMC, GENERAL Panjit International Inc.	800	0.45	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	80pF @ 4V, 1MHz	-	10 µA @ 400 V	400 V	5A	-55°C ~ 150°C	1.1 V @ 5 A
Таблицы данных	PMEG4020ER,115 DIODE SCHOTTKY 40V 2A SOD123W Nexperia USA Inc.	2710	0.43	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	2A	150°C (Max)	490 mV @ 2 A
Таблицы данных	IDWD30G120C5XKSA1 SIC SCHOTTKY 1200V 30A TO247-2 Infineon Technologies	3311	15.47	- + Добавить Расследования	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1980pF @ 1V, 1MHz	0 ns	248 µA @ 1200 V	1200 V	87A (DC)	-55°C ~ 175°C	1.65 V @ 30 A
Таблицы данных	RB521S-30-TP DIODE SCHOTTKY 30V 200MA SOD523 Micro Commercial Co	2424	0.45	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	-	-	30 µA @ 10 V	30 V	200mA	125°C (Max)	500 mV @ 200 mA
Таблицы данных	SL13TR DIODE SCHOTTKY 30V 1A SMA SMC Diode Solutions	2956	0.49	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 30 V	30 V	1A	-65°C ~ 125°C	380 mV @ 1 A
Таблицы данных	GI1404-E3/45 DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division	830	1.17	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 200 V	200 V	8A	-65°C ~ 150°C	975 mV @ 8 A
Таблицы данных	SS2040LL_R1_00001 SOD-123FL, SKY Panjit International Inc.	2187	0.43	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	2A	-50°C ~ 125°C	450 mV @ 2 A
Таблицы данных	IDW40G65C5XKSA1 DIODE SCHOTTKY 650V 40A TO247-3 Infineon Technologies	3663	16.57	- + Добавить Расследования	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1140pF @ 1V, 1MHz	0 ns	220 µA @ 650 V	650 V	40A (DC)	-55°C ~ 175°C	1.7 V @ 40 A
Таблицы данных	ES1A-LTP DIODE GEN PURP 50V 1A DO214AC Micro Commercial Co	3755	0.45	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	5 µA @ 50 V	50 V	1A	-65°C ~ 175°C	950 mV @ 1 A
Таблицы данных	SS3P6HM3/85A DIODE SCHOTTKY 60V 3A DO220AA Vishay General Semiconductor - Diodes Division	3785	0.40	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	100 µA @ 60 V	60 V	3A	-55°C ~ 150°C	780 mV @ 3 A
Таблицы данных	VS-ETL0806FP-M3 DIODE GEN PURP 600V 8A TO220-2 Vishay General Semiconductor - Diodes Division	998	1.25	- + Добавить Расследования	Bulk	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	9 µA @ 600 V	600 V	8A	-65°C ~ 175°C	1.07 V @ 8 A
Таблицы данных	RB160VAM-60TR DIODE SCHOTTKY 60V 1A TUMD2M Rohm Semiconductor	411	0.52	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	40 µA @ 60 V	60 V	1A	150°C (Max)	670 mV @ 1 A
Таблицы данных	NDSH25170A SIC JBS 1700V 25A TO247 onsemi	3660	20.03	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	2025pF @ 1V, 100kHz	0 ns	40 µA @ 1700 V	1700 V	25A	-55°C ~ 175°C	1.75 V @ 25 A
Таблицы данных	ES1B-LTP DIODE GEN PURP 100V 1A DO214AC Micro Commercial Co	2945	0.45	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	15pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	950 mV @ 1 A
Таблицы данных	LL4004G L0G DIODE GEN PURP 400V 1A MELF Taiwan Semiconductor Corporation	3744	0.39	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	15pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	1A	-65°C ~ 150°C	1.1 V @ 30 A
Таблицы данных	MBR10100-M3/4W DIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division	1000	1.28	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-65°C ~ 150°C	800 mV @ 10 A
Таблицы данных	RFN1LAM6STR DIODE GEN PURP 600V 800MA PMDTM Rohm Semiconductor	3888	0.52	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	1 µA @ 600 V	600 V	800mA	150°C (Max)	1.45 V @ 800 mA
Таблицы данных	GC50MPS12-247 SIC DIODE 1200V 50A TO-247-2 GeneSiC Semiconductor	2205	24.83	- + Добавить Расследования	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	3263pF @ 1V, 1MHz	0 ns	40 µA @ 1200 V	1200 V	212A (DC)	-55°C ~ 175°C	1.8 V @ 50 A
Таблицы данных	LL101C-GS08 DIODE SCHOTTKY 40V 30MA SOD80 Vishay General Semiconductor - Diodes Division	3364	0.40	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	2.2pF @ 0V, 1MHz	1 ns	200 nA @ 30 V	40 V	30mA (DC)	125°C (Max)	390 mV @ 1 mA

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