Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
S9051D S9051D

S9051D

DIODE

Diodes Incorporated

3188 0.00
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Bulk RoHS - - Obsolete - - - - - - - -
UF4007HB0G

Таблицы данных

UF4007HB0G

UF4007HB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3473 0.00
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Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
S9147D S9147D

S9147D

DIODE

Diodes Incorporated

3801 0.00
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Bulk RoHS - - Obsolete - - - - - - - -
UG2D B0G

Таблицы данных

UG2D B0G

UG2D B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2588 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
GP2D010A065A

Таблицы данных

GP2D010A065A

GP2D010A065A

DIODE SCHOTTKY 650V 10A TO220-2

SemiQ

3536 0.00
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Tube Amp+™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 527pF @ 1V, 1MHz - 100 µA @ 650 V 650 V 10A -55°C ~ 175°C 1.65 V @ 10 A
UG2DHB0G

Таблицы данных

UG2DHB0G

UG2DHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3915 0.00
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Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
GP2D010A065C

Таблицы данных

GP2D010A065C

GP2D010A065C

DIODE SCHOTTKY 650V 10A TO252

SemiQ

2967 0.00
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Tape & Reel (TR) Amp+™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 527pF @ 1V, 1MHz - 100 µA @ 650 V 650 V 10A -55°C ~ 175°C 1.65 V @ 10 A
GP2D020A065B

Таблицы данных

GP2D020A065B

GP2D020A065B

DIODE SCHOTTKY 650V 20A TO247-2

SemiQ

3089 0.00
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Tube Amp+™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 1054pF @ 1V, 1MHz - 200 µA @ 650 V 650 V 20A -55°C ~ 175°C 1.65 V @ 20 A
UG54G B0G

Таблицы данных

UG54G B0G

UG54G B0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

2543 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 200 V 200 V 5A -55°C ~ 175°C 1.05 V @ 5 A
GP2D060A120B

Таблицы данных

GP2D060A120B

GP2D060A120B

DIODE SCHOTKY 1.2KV 60A TO247-2

SemiQ

3449 0.00
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Расследования

Tube Amp+™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 3809pF @ 1V, 1MHz - 500 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 1.8 V @ 60 A
UG54GHB0G

Таблицы данных

UG54GHB0G

UG54GHB0G

DIODE GEN PURP 200V 5A DO201AD

Taiwan Semiconductor Corporation

3615 0.00
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Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 200 V 200 V 5A -55°C ~ 175°C 1.05 V @ 5 A
GSXD300A170S2D5

Таблицы данных

GSXD300A170S2D5

GSXD300A170S2D5

DIODE GP 1.7KV 300A ADD-A-PAK

SemiQ

3729 0.00
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Bulk Amp+™ RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - 540 ns - 1700 V 300A (DC) -40°C ~ 150°C 1.9 V @ 300 A
UG56G B0G

Таблицы данных

UG56G B0G

UG56G B0G

DIODE GEN PURP 400V 5A DO201AD

Taiwan Semiconductor Corporation

3801 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 400 V 400 V 5A -55°C ~ 175°C 1.55 V @ 5 A
CDH333 TR

Таблицы данных

CDH333 TR

CDH333 TR

DIODE GEN PURP 125V 200MA DO35

Central Semiconductor Corp

3818 0.00
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Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Last Time Buy Through Hole - 3 µs 3 nA @ 125 V 125 V 200mA -65°C ~ 200°C 1.15 V @ 300 mA
UG56GHB0G

Таблицы данных

UG56GHB0G

UG56GHB0G

DIODE GEN PURP 400V 5A DO201AD

Taiwan Semiconductor Corporation

3684 0.00
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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 400 V 400 V 5A -55°C ~ 175°C 1.55 V @ 5 A
FERD20S100SH

Таблицы данных

FERD20S100SH

FERD20S100SH

DIODE RECT 100V 20A I-PAK

STMicroelectronics

2970 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) FERD (Field Effect Rectifier Diode) Obsolete Through Hole - - 100 µA @ 100 V 100 V 20A 175°C (Max) 780 mV @ 10 A
UG58G B0G

Таблицы данных

UG58G B0G

UG58G B0G

DIODE GEN PURP 600V 5A DO201AD

Taiwan Semiconductor Corporation

3796 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 2.1 V @ 5 A
LSIC2SD120C05

Таблицы данных

LSIC2SD120C05

LSIC2SD120C05

DIODE SCHOTTKY 1.2KV 18.1A TO252

Littelfuse Inc.

2068 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 310pF @ 1V, 1MHz 0 ns 100 µA @ 1200 V 1200 V 18.1A (DC) -55°C ~ 175°C 1.8 V @ 5 A
UG58GHB0G

Таблицы данных

UG58GHB0G

UG58GHB0G

DIODE GEN PURP 600V 5A DO201AD

Taiwan Semiconductor Corporation

2954 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 2.1 V @ 5 A
LSIC2SD120C10

Таблицы данных

LSIC2SD120C10

LSIC2SD120C10

DIODE SCHOTTKY 1.2KV 33A TO252

Littelfuse Inc.

2567 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 582pF @ 1V, 1MHz 0 ns 100 µA @ 1200 V 1200 V 33A (DC) -55°C ~ 175°C 1.8 V @ 10 A
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