Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SFA806GHC0G

Таблицы данных

SFA806GHC0G

SFA806GHC0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2530 0.00
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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 1.3 V @ 8 A
CRSH2-4 BK

Таблицы данных

CRSH2-4 BK

CRSH2-4 BK

DIODE SCHOTTKY DO15

Central Semiconductor Corp

3828 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 170pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 2A -65°C ~ 125°C 500 mV @ 2 A
SFA807G C0G

Таблицы данных

SFA807G C0G

SFA807G C0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

3550 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
CRSH2-5 BK

Таблицы данных

CRSH2-5 BK

CRSH2-5 BK

DIODE SCHOTTKY DO15

Central Semiconductor Corp

2265 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 170pF @ 4V, 1MHz - 500 µA @ 50 V 50 V 2A -65°C ~ 125°C 700 mV @ 2 A
SFA807GHC0G

Таблицы данных

SFA807GHC0G

SFA807GHC0G

DIODE GEN PURP 500V 8A TO220AC

Taiwan Semiconductor Corporation

2675 0.00
- +

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Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 8A -55°C ~ 150°C 1.7 V @ 8 A
CRSH2-6 BK

Таблицы данных

CRSH2-6 BK

CRSH2-6 BK

DIODE SCHOTTKY DO15

Central Semiconductor Corp

2580 0.00
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 170pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 2A -65°C ~ 125°C 700 mV @ 2 A
SFA808GHC0G

Таблицы данных

SFA808GHC0G

SFA808GHC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2875 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
1N4001 BK

Таблицы данных

1N4001 BK

1N4001 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

2635 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SFAF1001G C0G

Таблицы данных

SFAF1001G C0G

SFAF1001G C0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

2549 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
1N4001G BK

Таблицы данных

1N4001G BK

1N4001G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

2839 0.00
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Расследования

Bulk RoHS - - Obsolete Through Hole - - - - - - -
SFAF1001GHC0G

Таблицы данных

SFAF1001GHC0G

SFAF1001GHC0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

2549 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
1N4002 BK

Таблицы данных

1N4002 BK

1N4002 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

2228 0.00
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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4002G BK

Таблицы данных

1N4002G BK

1N4002G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

3493 0.00
- +

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Расследования

Bulk RoHS - - Obsolete Through Hole - - - - - - -
1N4003 BK

Таблицы данных

1N4003 BK

1N4003 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

2779 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4003G BK

Таблицы данных

1N4003G BK

1N4003G BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

3418 0.00
- +

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Расследования

Bulk RoHS - - Obsolete Through Hole - - - - - - -
UF1MHB0G

Таблицы данных

UF1MHB0G

UF1MHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2751 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
1N4004G BK

Таблицы данных

1N4004G BK

1N4004G BK

DIODE GEN PURP 400V 1A DO41

Central Semiconductor Corp

3504 0.00
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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 2 µs 50 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
UF4001 B0G

Таблицы данных

UF4001 B0G

UF4001 B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3264 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4005 BK

Таблицы данных

1N4005 BK

1N4005 BK

DIODE GEN PURPOSE DO41

Central Semiconductor Corp

3810 0.00
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
UF4001HB0G

Таблицы данных

UF4001HB0G

UF4001HB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3257 0.00
- +

Добавить

Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
Total 48193 Records«Prev1... 23202321232223232324232523262327...2410Next»
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