Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	STTH310UFY DIODE GEN PURP 1KV 3A SMBFLAT STMicroelectronics	394	0.94	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	Automotive, AEC-Q101, ECOPACK®2	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 1000 V	1000 V	3A	-40°C ~ 175°C	1.7 V @ 3 A
	VS-E5TX3012-M3 30A, 1200V, "H" SERIES FRED PT I Vishay General Semiconductor - Diodes Division	500	2.22	- + Добавить Расследования	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	50 µA @ 1200 V	1200 V	30A	-55°C ~ 175°C	3.3 V @ 30 A
Таблицы данных	FDLL333 DIODE GEN PURP 125V 200MA SOD80 onsemi	651	0.31	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	6pF @ 0V, 1MHz	-	3 nA @ 125 V	125 V	200mA	175°C (Max)	1.15 V @ 300 mA
Таблицы данных	CMR3U-02 TR13 PBFREE DIODE GEN PURP 200V 3A SMC Central Semiconductor Corp	2530	1.85	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	5 µA @ 200 V	200 V	3A	-65°C ~ 175°C	1 V @ 3 A
	S5Q M3G 5A, 1200V, STANDARD RECOVERY REC Taiwan Semiconductor Corporation	750	0.82	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	27pF @ 4V, 1MHz	-	10 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 150°C	1.15 V @ 5 A
Таблицы данных	LSIC2SD065A20A SIC SCHOTTKY DIOD 650V 20A TO220 Littelfuse Inc.	886	10.40	- + Добавить Расследования	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	960pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	45A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
Таблицы данных	SDUR1560 DIODE GEN PURP 600V TO220AC SMC Diode Solutions	980	0.95	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 600 V	600 V	-	-55°C ~ 175°C	1.7 V @ 15 A
Таблицы данных	VS-C04ET07T-M3 DIODE SCHOTTKY 650V 4A TO220AC Vishay General Semiconductor - Diodes Division	495	2.24	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	170pF @ 1V, 1MHz	-	25 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
Таблицы данных	BAS29 DIODE GEN PURP 120V 200MA SOT23 onsemi	350	0.31	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	2pF @ 0V, 1MHz	50 ns	100 nA @ 90 V	120 V	200mA	150°C (Max)	1 V @ 200 mA
Таблицы данных	BYC20-600,127 DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors	5415	1.86	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	20A	150°C (Max)	2.9 V @ 20 A
Таблицы данных	FMY-1106S DIODE GEN PURP 600V 10A TO220F Sanken	238	0.82	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	200 ns	30 µA @ 600 V	600 V	10A	-40°C ~ 150°C	1.15 V @ 10 A
Таблицы данных	WNSC101200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	480	10.51	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 5 A
Таблицы данных	UF5406-E3/73 DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division	922	0.95	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	36pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
Таблицы данных	D4015LTP DIODE GEN PURP 400V 9.5A TO220 Littelfuse Inc.	940	2.32	- + Добавить Расследования	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	10 µA @ 400 V	400 V	9.5A	-40°C ~ 125°C	1.6 V @ 9.5 A
Таблицы данных	RB541VM-40TE-17 RB541VM-40 IS STANDARD SCHOTTKY Rohm Semiconductor	1682	0.32	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	200mA	125°C (Max)	610 mV @ 100 mA
Таблицы данных	GP3D008A065D SIC SCHOTTKY DIODE 650V TO263-2L SemiQ	800	1.92	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	-	-	Active	-	-	-	-	650 V	8A	-	-
Таблицы данных	VS-6EVH06-M3/I DIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division	260	0.83	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	28 ns	5 µA @ 600 V	600 V	6A	-55°C ~ 175°C	2.1 V @ 6 A
Таблицы данных	STPSC20H12G-TR DIODE SCHOTTKY 1.2KV 20A D2PAK STMicroelectronics	819	10.68	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1650pF @ 0V, 1MHz	0 ns	120 µA @ 1200 V	1200 V	20A	-40°C ~ 175°C	1.5 V @ 20 A
Таблицы данных	MUR805G DIODE GEN PURP 50V 8A TO220AC onsemi	756	0.95	- + Добавить Расследования	Tube	SWITCHMODE™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	35 ns	5 µA @ 50 V	50 V	8A	-65°C ~ 175°C	975 mV @ 8 A
	S3D06065F DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	1000	2.34	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	382pF @ 0V, 1MHz	0 ns	8 µA @ 650 V	650 V	6A	-55°C ~ 175°C	1.7 V @ 6 A

Total 48193 Records«Prev 1... 228 229 230 231232233 234 235...2410 Next»