Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	WNSC101200Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2435	8.93	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
Таблицы данных	UJ3D06504TS 650V 4A SIC SCHOTTKY DIODE G3, T UnitedSiC	993	2.27	- + Добавить Расследования	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	118pF @ 1V, 1MHz	0 ns	25 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
Таблицы данных	NTE6354 R-400 PRV 300 A CATH CASE NTE Electronics, Inc	3370	61.95	- + Добавить Расследования	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	40 mA @ 400 V	400 V	300A	-40°C ~ 180°C	-
Таблицы данных	STPS1545DY DIODE SCHOTTKY 45V 15A TO220AC STMicroelectronics	1305	1.75	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 45 V	45 V	15A	-40°C ~ 175°C	570 mV @ 15 A
Таблицы данных	FML-G22S DIODE GEN PURP 200V 10A TO220F Sanken	352	0.79	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	40 ns	200 µA @ 200 V	200 V	10A	-40°C ~ 150°C	980 mV @ 10 A
Таблицы данных	WNSC101200WQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	1200	8.93	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
Таблицы данных	GP3D006A065A DIODE SILICON CARBIDE SemiQ	476	1.98	- + Добавить Расследования	Tube	Amp+™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	229pF @ 1V, 1MHz	-	15 µA @ 650 V	650 V	20A (DC)	-55°C ~ 175°C	1.55 V @ 6 A
Таблицы данных	1N4004GP-TP DIODE GEN PURP 400V 1A DO41 Micro Commercial Co	108	0.29	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
Таблицы данных	SDUR15Q60WTB 600V FRD,15A,PACKAGE TO-247AC SMC Diode Solutions	3000	1.78	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	20 µA @ 600 V	600 V	15A	-55°C ~ 150°C	2 V @ 15 A
Таблицы данных	CMR1U-01 TR13 PBFREE DIODE GEN PURP 100V 1A SMB Central Semiconductor Corp	315	0.79	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1 V @ 1 A
Таблицы данных	VS-1N1183A DIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division	294	8.93	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 50 V	50 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
	S4D02120A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	298	1.99	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	116pF @ 0V, 1MHz	0 ns	10 µA @ 1200 V	1200 V	2A	-55°C ~ 175°C	1.8 V @ 2 A
Таблицы данных	FDLL4150 DIODE GEN PURP 50V 200MA SOD80 onsemi	751	0.30	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	2.5pF @ 0V, 1MHz	6 ns	100 nA @ 50 V	50 V	200mA	175°C (Max)	1 V @ 200 mA
Таблицы данных	B390-13-F DIODE SCHOTTKY 90V 3A SMC Diodes Incorporated	2317	1.79	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	100pF @ 4V, 1MHz	-	500 µA @ 90 V	90 V	3A	-55°C ~ 125°C	790 mV @ 3 A
Таблицы данных	ESH3D-E3/57T DIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division	459	0.80	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	40 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	900 mV @ 3 A
Таблицы данных	VS-1N1186 DIODE GEN PURP 200V 35A DO203AB Vishay General Semiconductor - Diodes Division	142	8.94	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 mA @ 200 V	200 V	35A	-65°C ~ 190°C	1.7 V @ 110 A
Таблицы данных	STF15150 DIODE SCHOTTKY 150V ITO220AC SMC Diode Solutions	988	0.94	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	-	-55°C ~ 150°C	1.36 V @ 15 A
Таблицы данных	SCS302APC9 DIODE SCHOTTKY 650V 2A TO220-2 Rohm Semiconductor	452	2.08	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	110pF @ 1V, 1MHz	0 ns	10.8 µA @ 650 V	650 V	2A (DC)	175°C (Max)	1.5 V @ 2 A
Таблицы данных	CDBC380-G DIODE SCHOTTKY 80V 3A DO214AB Comchip Technology	151	0.30	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 80 V	80 V	3A	125°C (Max)	850 mV @ 3 A
Таблицы данных	STTH8R06G-TR DIODE GEN PURP 600V 8A D2PAK STMicroelectronics	1222	1.79	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	45 ns	30 µA @ 600 V	600 V	8A	175°C (Max)	2.9 V @ 8 A

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