Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	SF2005GHC0G DIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation	3489	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
Таблицы данных	CSA2K-E3/I DIODE GPP 2A 800V DO-214AC SMA Vishay General Semiconductor - Diodes Division	2889	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	11pF @ 4V, 1MHz	2.1 µs	5 µA @ 800 V	800 V	1.6A	-55°C ~ 150°C	1.15 V @ 2 A
Таблицы данных	SF2006GHC0G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	3981	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
Таблицы данных	CS3D-E3/I DIODE GPP 200V 2A DO-214AB SMC Vishay General Semiconductor - Diodes Division	3238	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	26pF @ 4V, 1MHz	2.8 µs	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	1.15 V @ 3 A
Таблицы данных	SF2007G C0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2248	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	IDC04S60CEX1SA1 DIODE SIC 600V 4A SAWN WAFER Infineon Technologies	3525	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	130pF @ 1V, 1MHz	0 ns	50 µA @ 600 V	600 V	4A (DC)	-55°C ~ 175°C	1.9 V @ 4 A
Таблицы данных	SF2007GHC0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2883	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	IDC04S60CEX7SA1 DIODE GEN PURPOSE SAWN WAFER Infineon Technologies	3837	- + Добавить Расследования	Bulk		RoHS	-	-	Obsolete	Surface Mount	-	-	-	-	-	-	-
Таблицы данных	SF2007PT C0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2538	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
Таблицы данных	IDC05S60CEX1SA1 DIODE SIC 600V 5A SAWN WAFER Infineon Technologies	3178	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	240pF @ 1V, 1MHz	0 ns	70 µA @ 600 V	600 V	5A (DC)	-55°C ~ 175°C	1.7 V @ 5 A
Таблицы данных	SF2007PTHC0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2277	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
Таблицы данных	IDC08S60CEX1SA2 DIODE SIC 600V 8A SAWN WAFER Infineon Technologies	3853	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	310pF @ 1V, 1MHz	0 ns	100 µA @ 600 V	600 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
Таблицы данных	SF2008G C0G DIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation	2430	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	IDC08S60CEX1SA3 DIODE SIC 600V 8A SAWN WAFER Infineon Technologies	2594	- + Добавить Расследования	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	310pF @ 1V, 1MHz	0 ns	100 µA @ 600 V	600 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
Таблицы данных	SF2008GHC0G DIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation	3678	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	IDC08S60CEX7SA1 DIODE GEN PURPOSE SAWN WAFER Infineon Technologies	2607	- + Добавить Расследования	Bulk		RoHS	-	-	Obsolete	Surface Mount	-	-	-	-	-	-	-
Таблицы данных	SF3001PT C0G DIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation	2002	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	30A	-55°C ~ 150°C	950 mV @ 15 A
Таблицы данных	CD214A-F1400 DIODE GEN PURP 400V 1A DO214AC Bourns Inc.	2188	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	10pF @ 4V, 1MHz	25 ns	5 µA @ 40 V	400 V	1A	-55°C ~ 150°C	1.25 V @ 1 A
Таблицы данных	SF3001PTHC0G DIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation	2933	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	30A	-55°C ~ 150°C	950 mV @ 15 A
Таблицы данных	CDBV1100-HF DIODE SCHOTTKY 100V 1A SOD323 Comchip Technology	2103	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	25pF @ 4V, 1MHz	-	50 µA @ 100 V	100 V	1A	-55°C ~ 150°C	820 mV @ 1 A

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