Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-30APF12PBF VS-30APF12PBF

VS-30APF12PBF

DIODE GEN PURP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

3716 0.00
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 95 ns 100 µA @ 1200 V 1200 V 30A -40°C ~ 150°C 1.41 V @ 30 A
SF1603GHC0G

Таблицы данных

SF1603GHC0G

SF1603GHC0G

DIODE GEN PURP 150V 16A TO220AB

Taiwan Semiconductor Corporation

2580 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 16A -55°C ~ 150°C 975 mV @ 8 A
VS-30ETH06FP-F3

Таблицы данных

VS-30ETH06FP-F3

VS-30ETH06FP-F3

DIODE GEN PURP 600V 30A TO220FP

Vishay General Semiconductor - Diodes Division

3753 0.00
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Расследования

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 23 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
SF1603PT C0G

Таблицы данных

SF1603PT C0G

SF1603PT C0G

DIODE GEN PURP 150V 16A TO247AD

Taiwan Semiconductor Corporation

3024 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-30ETH06-N3

Таблицы данных

VS-30ETH06-N3

VS-30ETH06-N3

DIODE GEN PURP 600V 30A TO220AC

Vishay General Semiconductor - Diodes Division

3862 0.00
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Расследования

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 31 ns 50 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.6 V @ 30 A
VS-40EPS16PBF

Таблицы данных

VS-40EPS16PBF

VS-40EPS16PBF

DIODE GEN PURP 1.6KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

2236 0.00
- +

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Расследования

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 100 µA @ 1600 V 1600 V 40A -40°C ~ 150°C 1.14 V @ 40 A
SF1603PTHC0G

Таблицы данных

SF1603PTHC0G

SF1603PTHC0G

DIODE GEN PURP 150V 16A TO247AD

Taiwan Semiconductor Corporation

3596 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-60APF02PBF

Таблицы данных

VS-60APF02PBF

VS-60APF02PBF

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3270 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604GHC0G

Таблицы данных

SF1604GHC0G

SF1604GHC0G

DIODE GEN PURP 200V 16A TO220AB

Taiwan Semiconductor Corporation

3561 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 975 mV @ 8 A
VS-60APF04PBF

Таблицы данных

VS-60APF04PBF

VS-60APF04PBF

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3996 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604PT C0G

Таблицы данных

SF1604PT C0G

SF1604PT C0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

3297 0.00
- +

Добавить

Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-60APF06PBF

Таблицы данных

VS-60APF06PBF

VS-60APF06PBF

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2499 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 600 V 600 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604PTHC0G

Таблицы данных

SF1604PTHC0G

SF1604PTHC0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

2602 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-60APF10PBF VS-60APF10PBF

VS-60APF10PBF

DIODE GEN PURP 1KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

3515 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1000 V 1000 V 60A -40°C ~ 150°C 1.4 V @ 60 A
SF1605G C0G

Таблицы данных

SF1605G C0G

SF1605G C0G

DIODE GEN PURP 300V 16A TO220AB

Taiwan Semiconductor Corporation

3766 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
VS-60APF12PBF VS-60APF12PBF

VS-60APF12PBF

DIODE GEN PURP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

2287 0.00
- +

Добавить

Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1200 V 1200 V 60A -40°C ~ 150°C 1.4 V @ 60 A
SF1605GHC0G

Таблицы данных

SF1605GHC0G

SF1605GHC0G

DIODE GEN PURP 300V 16A TO220AB

Taiwan Semiconductor Corporation

2136 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1605PT C0G

Таблицы данных

SF1605PT C0G

SF1605PT C0G

DIODE GEN PURP 300V 16A TO247AD

Taiwan Semiconductor Corporation

3821 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1605PTHC0G

Таблицы данных

SF1605PTHC0G

SF1605PTHC0G

DIODE GEN PURP 300V 16A TO247AD

Taiwan Semiconductor Corporation

2695 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1606GHC0G

Таблицы данных

SF1606GHC0G

SF1606GHC0G

DIODE GEN PURP 400V 16A TO220AB

Taiwan Semiconductor Corporation

2013 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 8 A
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