Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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UF27520070A1.T1PIV 200V IO 90A TRR 70NS CHIP SI |
3280 | 4.82 |
ДобавитьРасследования |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 70 ns | 60 µA @ 200 V | 200 V | 90A | 150°C (Max) | 1 V @ 90 A | |||
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Таблицы данных |
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EM01ZDIODE GEN PURP 200V 1A AXIAL |
2937 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |||
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Таблицы данных |
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VS-100BGQ015HF4DIODE SCHOTTKY 15V 100A POWERTAB |
2844 | 4.82 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 3800pF @ 5V, 1MHz | - | 18 mA @ 15 V | 15 V | 100A | -55°C ~ 125°C | 520 mV @ 100 A | ||
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Таблицы данных |
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EP01CDIODE GEN PURP 1KV 200MA AXIAL |
3411 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |||
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Таблицы данных |
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VS-100BGQ045HF4DIODE SCHOTTKY 45V 100A POWERTAB |
2520 | 4.84 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 2700pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 100A | -55°C ~ 150°C | 770 mV @ 100 A | ||
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Таблицы данных |
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ES1DIODE GEN PURP 400V 700MA AXIAL |
2370 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2.5 V @ 800 mA | |||
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Таблицы данных |
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CDLL486BDIODE GEN PURP 250V 200MA DO213 |
2287 | 4.85 |
ДобавитьРасследования |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 250 V | 250 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |||
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Таблицы данных |
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EU1ZDIODE GEN PURP 200V 500MA AXIAL |
2326 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 500mA | -40°C ~ 150°C | 1 V @ 500 mA | |||
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Таблицы данных |
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DMA30P1600HRPOWER DIODE DISC-RECTIFIER ISOPL |
2771 | 4.85 |
ДобавитьРасследования |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 400V, 1MHz | - | 40 µA @ 1600 V | 1600 V | 30A | -55°C ~ 175°C | 1.28 V @ 30 A | |||
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Таблицы данных |
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EU2DIODE GEN PURP 400V 1A AXIAL |
2874 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |||
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Таблицы данных |
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VS-EBU8006HF4DIODE GEN PURP 600V 80A POWERTAB |
2057 | 4.86 |
ДобавитьРасследования |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 8 µA @ 600 V | 600 V | 80A | -65°C ~ 175°C | 1.53 V @ 80 A | |||
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Таблицы данных |
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EU2ADIODE GEN PURP 600V 1A AXIAL |
3662 | 0.28 |
ДобавитьРасследования |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |||
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PCFFS08120AFDIODE SCHOTTKY 8A 1200V DIE |
2141 | 4.87 |
ДобавитьРасследования |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 8A | 175°C (Max) | 1.723 V @ 20 A | |||
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Таблицы данных |
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RH 1AV1DIODE GEN PURP 600V 600MA AXIAL |
3720 | 0.28 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |||
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Таблицы данных |
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JANTX1N5617DIODE GEN PURP 400V 1A AXIAL |
2177 | 4.88 |
ДобавитьРасследования |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | ||
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Таблицы данных |
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RH 1BV1DIODE GEN PURP 800V 600MA AXIAL |
3722 | 0.28 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 800 V | 800 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |||
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Таблицы данных |
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RH 1ZV1DIODE GEN PURP 200V 600MA AXIAL |
2083 | 0.28 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 200 V | 200 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |||
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Таблицы данных |
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RM 2ZV1DIODE GEN PURP 200V 1.2A AXIAL |
3246 | 0.28 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |||
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Таблицы данных |
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CD5822DIODE SMALL-SIGNAL SCHOTTKY |
3982 | 8.42 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 550 mV @ 3 A | |||
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Таблицы данных |
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RU 1V1DIODE GEN PURP 400V 250MA AXIAL |
2173 | 0.28 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA |
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