Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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S3D30065D1DIODE SCHOTTKY SILICON CARBIDE S |
275 | 10.14 |
ДобавитьРасследования |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
![]() Таблицы данных |
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NTE6121R-1600V 1200A |
3016 | 239.33 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1600 V | 1600 V | 1625A | -30°C ~ 175°C | 1.93 V @ 3770 A | |||
![]() Таблицы данных |
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S3D30065HDIODE SCHOTTKY SILICON CARBIDE S |
300 | 10.38 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1705pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 1.75 V @ 30 A | |||
![]() Таблицы данных |
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DZ600N16KHPSA1DIODE GEN PURP 1.6KV 735A MODULE |
2497 | 241.78 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1600 V | 1600 V | 735A | -40°C ~ 150°C | 1.4 V @ 2200 A | |||
![]() Таблицы данных |
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NTE5889R-1200V 25A DO4 AK |
108 | 10.43 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 1 mA @ 1200 V | 1200 V | 30A | -40°C ~ 175°C | 1.2 V @ 30 A | |||
![]() Таблицы данных |
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NTE6114R-1600PRV 1100A |
2737 | 250.00 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 1600 V | 1600 V | 1400A | -40°C ~ 180°C | 1.31 V @ 1500 A | |||
![]() Таблицы данных |
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UJ3D1220KSD1200V 20A SIC SCHOTTKY DIODE G3, |
445 | 11.55 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1020pF @ 1V, 1MHz | 0 ns | 220 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |||
![]() Таблицы данных |
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NTE6106R-1600 PRV 450A CATH CASE |
2290 | 260.64 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 11 µs | 50 mA @ 1600 V | 1600 V | 450A | -65°C ~ 175°C | 1.6 V @ 1500 A | |||
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S4D20120ADIODE SCHOTTKY SILICON CARBIDE S |
150 | 10.70 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 0V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.8 V @ 20 A | |||
![]() Таблицы данных |
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NTE6107R-1600PRV 450A ANODE CASE |
2030 | 260.64 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 11 µs | 50 mA @ 1600 V | 1600 V | 450A | -65°C ~ 175°C | 1.6 V @ 1500 A | |||
![]() Таблицы данных |
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NTE5994R-600 PRV 40A CATH CASE |
186 | 10.80 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 9 mA @ 600 V | 600 V | 40A | -65°C ~ 190°C | 1.3 V @ 40 A | |||
![]() Таблицы данных |
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NTE6105R-1200PRV 550A ANODE CASE |
3294 | 265.72 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 9 µs | 50 mA @ 1200 V | 1200 V | 300A | -65°C ~ 200°C | 2.15 V @ 1500 A | |||
![]() Таблицы данных |
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S4D20120HDIODE SCHOTTKY SILICON CARBIDE S |
600 | 11.17 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 0V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.8 V @ 20 A | |||
![]() Таблицы данных |
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NTE6104R-1200 PRV 550A CATH CASE |
2034 | 265.72 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 9 µs | 50 mA @ 1200 V | 1200 V | 300A | -65°C ~ 200°C | 2.15 V @ 1500 A | |||
![]() Таблицы данных |
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NTE5916R-200PRV 20A CATH CASE |
188 | 11.50 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 200 V | 200 V | 20A | -65°C ~ 175°C | 1.23 V @ 63 A | |||
![]() Таблицы данных |
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NTE6128R-1400V 430A FAST REC |
3273 | 288.00 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 1 µs | 50 mA @ 1400 V | 1400 V | 430A | -40°C ~ 150°C | 2 V @ 800 A | |||
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S3D35065D1DIODE SCHOTTKY SILICON CARBIDE S |
600 | 11.56 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2000pF @ 0V, 1MHz | 0 ns | 45 µA @ 650 V | 650 V | 35A | -55°C ~ 175°C | 1.7 V @ 35 A | |||
![]() Таблицы данных |
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NTE6129R-1600V 700A FAST REC |
3324 | 314.00 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 2 µs | 50 mA @ 1600 V | 1600 V | 700A | -40°C ~ 150°C | 2.2 V @ 1500 A | |||
![]() Таблицы данных |
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NTE6109R-1600PRV 550A ANODE |
3613 | 338.52 |
ДобавитьРасследования |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 9 µs | 50 mA @ 1600 V | 1600 V | 300A | -65°C ~ 200°C | 2.15 V @ 1500 A | |||
![]() Таблицы данных |
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UJ3D06530TS650V 30A SIC SCHOTTKY DIODE G3, |
829 | 11.78 |
ДобавитьРасследования |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 990pF @ 1V, 1MHz | 0 ns | 370 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |