Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
	JANTXV1N6778 RECTIFIER Microchip Technology	3629	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	300pF @ 5V, 1MHz	60 ns	10 µA @ 320 V	400 V	15A	150°C (Max)	1.6 V @ 15 A
Таблицы данных	UF4002HA0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	2648	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	2A05GHA0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	2353	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1 V @ 2 A
Таблицы данных	NXPSC06650BJ DIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors	3819	- + Добавить Расследования	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
Таблицы данных	ESH3B V7G DIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation	2039	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	20 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 175°C	-
	JANTXV1N6779 RECTIFIER Microchip Technology	2737	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	300pF @ 5V, 1MHz	60 ns	10 µA @ 480 V	600 V	15A	150°C (Max)	1.6 V @ 15 A
Таблицы данных	UF4003 A0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	3567	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	2A06G A0G DIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation	3626	- + Добавить Расследования	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	2A	-55°C ~ 150°C	1 V @ 2 A
Таблицы данных	NXPSC06650DJ DIODE SCHOTTKY 650V 6A DPAK WeEn Semiconductors	3428	- + Добавить Расследования	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
Таблицы данных	ESH3C V7G DIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation	2260	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	20 ns	5 µA @ 150 V	150 V	3A	-55°C ~ 175°C	-
	JANTXV1N6840U3 SCHOTTKY DIODE Microchip Technology	3017	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	-	35 V	10A	-65°C ~ 150°C	880 mV @ 20 A
Таблицы данных	UF4003HA0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2305	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	2A06GHA0G DIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation	2474	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	2A	-55°C ~ 150°C	1 V @ 2 A
Таблицы данных	NXPSC06650XQ DIODE SCHOTTKY 650V 6A TO220F WeEn Semiconductors	3453	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
Таблицы данных	ESH3D V7G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	3846	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	20 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	-
	JANTXV1N6841U3 SCHOTTKY DIODE Microchip Technology	2868	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	-	35 V	10A	-65°C ~ 150°C	880 mV @ 20 A
Таблицы данных	UF4004 A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2803	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	2A07G A0G DIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation	3412	- + Добавить Расследования	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 1000 V	-	2A	-55°C ~ 150°C	1 V @ 2 A
Таблицы данных	NXPSC08650BJ DIODE SCHOTTKY 650V 8A D2PAK WeEn Semiconductors	2651	- + Добавить Расследования	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Surface Mount	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
Таблицы данных	HS3A V6G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	3017	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	-

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