Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
2A01GHA0G

Таблицы данных

2A01GHA0G

2A01GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3032 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30JT-600PQ

Таблицы данных

BYV30JT-600PQ

BYV30JT-600PQ

DIODE GEN PURP 600V 30A TO-3P

WeEn Semiconductors

3752 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.8 V @ 30 A
ES3A V7G

Таблицы данных

ES3A V7G

ES3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3664 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
BAS321/8X

Таблицы данных

BAS321/8X

BAS321/8X

DIODE GEN PURP 200V 250MA SOD323

Nexperia USA Inc.

3066 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
JANTXV1N6772R JANTXV1N6772R

JANTXV1N6772R

RECTIFIER

Microchip Technology

2337 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 320 V 400 V 8A (DC) - 1.6 V @ 8 A
UF1KHA0G

Таблицы данных

UF1KHA0G

UF1KHA0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2489 0.00
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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02G A0G

Таблицы данных

2A02G A0G

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3432 0.00
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Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30W-600PQ

Таблицы данных

BYV30W-600PQ

BYV30W-600PQ

DIODE GEN PURP 600V 30A TO247-2

WeEn Semiconductors

3695 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.55 V @ 30 A
ES3B V6G

Таблицы данных

ES3B V6G

ES3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2179 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
BYC30-1200PQ

Таблицы данных

BYC30-1200PQ

BYC30-1200PQ

DIODE GEN PURP 1.2KV 30A TO220AC

WeEn Semiconductors

3808 0.00
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 250 µA @ 1200 V 1200 V 30A 175°C (Max) 3.3 V @ 30 A
JANTXV1N6773 JANTXV1N6773

JANTXV1N6773

RECTIFIER

Microchip Technology

2502 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 480 V 600 V 8A (DC) - 1.6 V @ 8 A
UF1M A0G

Таблицы данных

UF1M A0G

UF1M A0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3089 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02GHA0G

Таблицы данных

2A02GHA0G

2A02GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3939 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30X-600PQ

Таблицы данных

BYV30X-600PQ

BYV30X-600PQ

DIODE GEN PURP 600V 30A TO220F

WeEn Semiconductors

2429 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.55 V @ 30 A
ES3B V7G

Таблицы данных

ES3B V7G

ES3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2325 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
BYC5-1200PQ

Таблицы данных

BYC5-1200PQ

BYC5-1200PQ

DIODE GEN PURP 1.2KV 5A TO220AC

WeEn Semiconductors

2339 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 36 ns 100 µA @ 1200 V 1200 V 5A 175°C (Max) 3.2 V @ 5 A
JANTXV1N6773R JANTXV1N6773R

JANTXV1N6773R

RECTIFIER

Microchip Technology

2718 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 480 V 600 V 8A (DC) - 1.6 V @ 8 A
UF1MHA0G

Таблицы данных

UF1MHA0G

UF1MHA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2576 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
2A03G A0G

Таблицы данных

2A03G A0G

2A03G A0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2725 0.00
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Расследования

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
NXPLQSC20650WQ

Таблицы данных

NXPLQSC20650WQ

NXPLQSC20650WQ

NXPLQSC20650WQ TO-247 STANDARD

WeEn Semiconductors

3899 0.00
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Расследования

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 250pF @ 1V, 1MHz 0 ns 230 µA @ 650 V 650 V 20A 175°C (Max) 1.85 V @ 10 A
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