Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MCL4448

Таблицы данных

MCL4448

MCL4448

DIODE SOD-106 100V 0.15A 4NS

DComponents

3629 0.07
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Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 75 V 150mA -55°C ~ 175°C 1 V @ 100 mA
RB063L-30TE25

Таблицы данных

RB063L-30TE25

RB063L-30TE25

DIODE SCHOTTKY 30V 2A PMDS

Rohm Semiconductor

1353 0.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 30 V 30 V 2A 125°C (Max) 395 mV @ 2 A
UJ3D06510TS

Таблицы данных

UJ3D06510TS

UJ3D06510TS

650V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

2627 3.86
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Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 327pF @ 1V, 1MHz 0 ns 60 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
S1J

Таблицы данных

S1J

S1J

ST Rect, 600V, 1A

DComponents

1305000 0.06
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 1.5 µs 5 µA @ 600 V 600 V 1A -50°C ~ 150°C 1.1 V @ 1 A
DSK16

Таблицы данных

DSK16

DSK16

SCHOTTKY DIODE SOD-123FL 60V 1A

NextGen Components

108000 0.08
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Tape & Reel (TR) SOD-123FL RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 0.3 mA @ 60 V 60 V 1A -55°C ~ 125°C 700 mV @ 1 A
SK510C V7G

Таблицы данных

SK510C V7G

SK510C V7G

DIODE SCHOTTKY 5A 100V DO-214AB

Taiwan Semiconductor Corporation

1292 0.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 100 V 100 V 5A -55°C ~ 150°C 850 mV @ 5 A
TRS8A65F,S1Q TRS8A65F,S1Q

TRS8A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=8A

Toshiba Semiconductor and Storage

200 3.91
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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 28pF @ 650V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A (DC) 175°C (Max) 1.6 V @ 8 A
FR107G-D1-3000

Таблицы данных

FR107G-D1-3000

FR107G-D1-3000

DIODE GEN PURP 1000V 1A DO204AL

Yangzhou Yangjie Electronic Technology Co.,Ltd

49890 0.47
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Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 2.5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S8JC V7G

Таблицы данных

S8JC V7G

S8JC V7G

DIODE GEN PURP 600V 8A DO214AB

Taiwan Semiconductor Corporation

1199 0.96
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 985 mV @ 8 A
S8GC V7G

Таблицы данных

S8GC V7G

S8GC V7G

DIODE GEN PURP 400V 8A DO214AB

Taiwan Semiconductor Corporation

1114 0.96
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 8A -55°C ~ 150°C 985 mV @ 8 A
TSN525M60HS3G TSN525M60HS3G

TSN525M60HS3G

DIODE SCHOTTKY 60V 25A 8PDFN

Taiwan Semiconductor Corporation

1011 0.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 60 V 60 V 25A -55°C ~ 150°C 630 mV @ 25 A
MBR15200DJFTR

Таблицы данных

MBR15200DJFTR

MBR15200DJFTR

DIODE SCHOTTKY 200V PDFNWB5X6-8L

SMC Diode Solutions

2735 0.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 1 mA @ 200 V 200 V - -55°C ~ 200°C 920 mV @ 15 A
NXPSC06650X6Q

Таблицы данных

NXPSC06650X6Q

NXPSC06650X6Q

DIODE SCHOTTKY 650V 6A TO220F

WeEn Semiconductors

2997 4.01
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 190pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 6A 175°C (Max) 1.7 V @ 6 A
VS-8EVH06-M3/I

Таблицы данных

VS-8EVH06-M3/I

VS-8EVH06-M3/I

DIODE GEN PURPOSE 600V SLIMDPAK

Vishay General Semiconductor - Diodes Division

393 0.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 20 µA @ 600 V 600 V 8A -55°C ~ 175°C 2.4 V @ 8 A
KYW35K6

Таблицы данных

KYW35K6

KYW35K6

DIODE STD D12.77X6.6W 600V 35A

Diotec Semiconductor

500 2.18
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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 600 V 600 V 35A -50°C ~ 175°C 1.1 V @ 35 A
SBRT10U60D1-13

Таблицы данных

SBRT10U60D1-13

SBRT10U60D1-13

DIODE SBR 60V 10A TO252

Diodes Incorporated

1932 0.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 400 µA @ 60 V 60 V 10A -55°C ~ 150°C 520 mV @ 10 A
KYW35A6

Таблицы данных

KYW35A6

KYW35A6

DIODE STD D12.77X6.6W 600V 35A

Diotec Semiconductor

500 2.18
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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 600 V 600 V 35A -50°C ~ 175°C 1.1 V @ 35 A
ES3DB R5G

Таблицы данных

ES3DB R5G

ES3DB R5G

DIODE GEN PURP 200V 3A DO214AA

Taiwan Semiconductor Corporation

1885 0.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 46pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
1N645

Таблицы данных

1N645

1N645

D-SI 225V .4A

NTE Electronics, Inc

314 2.22
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Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 200 nA @ 225 V 225 V 400mA -65°C ~ 175°C 1 V @ 400 mA
FFSP05120A

Таблицы данных

FFSP05120A

FFSP05120A

DIODE SCHOTTKY 1.2KV TO220-2

onsemi

540 4.03
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns 200 µA @ 1200 V 1200 V - - 1.75 V @ 5 A
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