Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR1203 B0G

Таблицы данных

SR1203 B0G

SR1203 B0G

DIODE SCHOTTKY 30V 12A DO201AD

Taiwan Semiconductor Corporation

2375 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3CHM6G

Таблицы данных

ES3CHM6G

ES3CHM6G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

3942 0.00
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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK19B M4G

Таблицы данных

SK19B M4G

SK19B M4G

DIODE SCHOTTKY 90V 1A DO214AA

Taiwan Semiconductor Corporation

2584 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 3 A
SF61G B0G

Таблицы данных

SF61G B0G

SF61G B0G

DIODE GEN PURP 50V 6A DO201AD

Taiwan Semiconductor Corporation

3097 0.00
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 6A -55°C ~ 150°C 975 mV @ 6 A
SFAF1606GHC0G

Таблицы данных

SFAF1606GHC0G

SFAF1606GHC0G

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation

3731 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 16 A
FR152G B0G

Таблицы данных

FR152G B0G

FR152G B0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

3367 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SR1203HB0G

Таблицы данных

SR1203HB0G

SR1203HB0G

DIODE SCHOTTKY 30V 12A DO201AD

Taiwan Semiconductor Corporation

3639 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3D M6G

Таблицы данных

ES3D M6G

ES3D M6G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

2094 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK19BHM4G

Таблицы данных

SK19BHM4G

SK19BHM4G

DIODE SCHOTTKY 90V 1A DO214AA

Taiwan Semiconductor Corporation

3554 0.00
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 3 A
SF61GHB0G

Таблицы данных

SF61GHB0G

SF61GHB0G

DIODE GEN PURP 50V 6A DO201AD

Taiwan Semiconductor Corporation

3487 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 6A -55°C ~ 150°C 975 mV @ 6 A
SFAF1607G C0G

Таблицы данных

SFAF1607G C0G

SFAF1607G C0G

DIODE GEN PURP 500V 16A ITO220AC

Taiwan Semiconductor Corporation

2774 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 16 A
FR152GHB0G

Таблицы данных

FR152GHB0G

FR152GHB0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

3408 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SR1204 B0G

Таблицы данных

SR1204 B0G

SR1204 B0G

DIODE SCHOTTKY 40V 12A DO201AD

Taiwan Semiconductor Corporation

2719 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3DHM6G

Таблицы данных

ES3DHM6G

ES3DHM6G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3369 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK22A M2G

Таблицы данных

SK22A M2G

SK22A M2G

DIODE SCHOTTKY 20V 2A DO214AC

Taiwan Semiconductor Corporation

2687 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 2A -55°C ~ 150°C 500 mV @ 2 A
SF62G B0G

Таблицы данных

SF62G B0G

SF62G B0G

DIODE GEN PURP 100V 6A DO201AD

Taiwan Semiconductor Corporation

3329 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 6A -55°C ~ 150°C 975 mV @ 6 A
SFAF1607GHC0G

Таблицы данных

SFAF1607GHC0G

SFAF1607GHC0G

DIODE GEN PURP 500V 16A ITO220AC

Taiwan Semiconductor Corporation

2586 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 16 A
FR153G B0G

Таблицы данных

FR153G B0G

FR153G B0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

2944 0.00
- +

Добавить

Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SR1204HB0G

Таблицы данных

SR1204HB0G

SR1204HB0G

DIODE SCHOTTKY 40V 12A DO201AD

Taiwan Semiconductor Corporation

2958 0.00
- +

Добавить

Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3DV M6G

Таблицы данных

ES3DV M6G

ES3DV M6G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3961 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 900 mV @ 3 A
Total 48193 Records«Prev1... 15791580158115821583158415851586...2410Next»
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