Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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R6507KND3TL1HIGH-SPEED SWITCHING, NCH 650V 7 |
2574 | 1.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MCACL200N04Y-TPN-CHANNEL MOSFET, DFN5060 |
10000 | 1.82 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A | 4.5V, 10V | 1.35mOhm @ 20A, 10V | 2.5V @ 250µA | 132 nC @ 10 V | ±20V | 7100 pF @ 25 V | - | 120W | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0851DPB-00#J5MOSFET N-CH 80V 20A LFPAK |
3034 | 0.84 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.5V @ 1mA | 14 nC @ 4.5 V | ±20V | 2050 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK1051DPB-00#J5MOSFET N-CH 100V 15A LFPAK |
3448 | 0.84 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta) | 4.5V, 10V | 39mOhm @ 7.5A, 10V | - | 15 nC @ 4.5 V | ±20V | 2060 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount |
| |
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SIR584DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE |
2139 | 1.65 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24.7A (Ta), 100A (Tc) | 7.5V, 10V | 3.9mOhm @ 15A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2800 pF @ 40 V | - | 5W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ402EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE |
2350 | 1.65 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 4.5V, 10V | 11mOhm @ 10.7A, 10V | 2.5V @ 250µA | 51 nC @ 10 V | ±20V | 2286 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
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PJP35N06A_T0_0000160V N-CHANNEL ENHANCEMENT MODE M |
2717 | 0.84 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.7A (Ta), 35A (Tc) | 4.5V, 10V | 21mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 20 V | - | 2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
|
RM150N100T2MOSFET N-CH 100V 150A TO220-3 |
3335 | 0.84 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 10V | 4.2mOhm @ 70A, 10V | 4V @ 250µA | - | +20V, -12V | 6680 pF @ 50 V | - | 275W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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IRFR9310TRLPBF-BE3MOSFET P-CH 400V 1.8A DPAK |
3622 | 1.65 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJA16EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) |
3906 | 1.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 278A (Tc) | 4.5V, 10V | 3mOhm @ 15A, 10V | 2.5V @ 250µA | 84 nC @ 10 V | ±20V | 5485 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ123ELP-T1_GE3AUTOMOTIVE P-CHANNEL 12 V (D-S) |
2106 | 1.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 238A (Tc) | 1.8V, 4.5V | 4mOhm @ 10A, 4.5V | 1.5V @ 250µA | 180 nC @ 4.5 V | ±8V | 11680 pF @ 6 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
SQJ182EP-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) |
3666 | 1.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 210A (Tc) | 10V | 5mOhm @ 15A, 10V | 3.5V @ 250µA | 96 nC @ 10 V | ±20V | 5392 pF @ 25 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF76407D3STMOSFET N-CH 60V 12A DPAK |
2011 | 1.18 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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MSJU11N65A-TPN-CHANNEL MOSFET, DPAK |
3057 | 1.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A | 10V | 380mOhm @ 3.2A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 763 pF @ 25 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA7672MOSFET N-CH 30V 9A 6MICROFET |
3253 | 0.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 21mOhm @ 9A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 760 pF @ 15 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIS184LDN-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE |
3093 | 1.68 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18.7A (Ta), 69.4A (Tc) | 4.5V, 10V | 5.4mOhm @ 10A, 10V | 3V @ 250µA | 41 nC @ 10 V | ±20V | 1950 pF @ 30 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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PJQ5440-AU_R2_000A140V N-CHANNEL ENHANCEMENT MODE M |
3707 | 1.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | ±20V | 5214 pF @ 25 V | - | 2.4W (Ta), 83.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
PSMN027-100XS,127MOSFET N-CH 100V 23.4A TO220F |
3256 | 0.51 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.4A (Tc) | 10V | 26.8mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1624 pF @ 50 V | - | 41.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF76633S3SMOSFET N-CH 100V 39A D2PAK |
3159 | 0.00 |
ДобавитьРасследования |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Tc) | 4.5V, 10V | 35mOhm @ 39A, 10V | 3V @ 250µA | 67 nC @ 10 V | ±16V | 1820 pF @ 25 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDU8882MOSFET N-CH 30V 12.6A/55A IPAK |
2027 | 0.00 |
ДобавитьРасследования |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Ta), 55A (Tc) | 4.5V, 10V | 11.5mOhm @ 35A, 10V | 2.5V @ 250µA | 33 nC @ 10 V | ±20V | 1260 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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