Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IRF710STRLPBFMOSFET N-CH 400V 2A D2PAK |
2587 | 1.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHU2N80AE-GE3MOSFET N-CH 800V 2.9A TO251AA |
2396 | 1.04 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 180 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TPN5900CNH,L1QMOSFET N-CH 150V 9A 8TSON |
2876 | 1.27 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHFR1N60A-GE3MOSFET N-CH 600V 1.4A TO252AA |
2014 | 1.04 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STL10N60M6MOSFET N-CH 600V 5.5A PWRFLAT HV |
2789 | 1.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 660mOhm @ 2.75A, 10V | 4.75V @ 250µA | - | ±25V | - | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN1R7-40YLDXMOSFET N-CH 40V 200A LFPAK56 |
3443 | 2.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 2.05V @ 1mA | 109 nC @ 10 V | ±20V | 7966 pF @ 20 V | Schottky Diode (Body) | 194W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF630STRRPBFMOSFET N-CH 200V 9A D2PAK |
3172 | 1.78 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STD2NK90ZT4MOSFET N-CH 900V 2.1A DPAK |
3533 | 1.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.1A (Tc) | 10V | 6.5Ohm @ 1.05A, 10V | 4.5V @ 50µA | 27 nC @ 10 V | ±30V | 485 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4630DY-T1-E3MOSFET N-CH 25V 40A 8SO |
2149 | 2.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 161 nC @ 10 V | ±16V | 6670 pF @ 15 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STD13N65M2MOSFET N-CH 650V 10A DPAK |
2147 | 1.98 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA50R950CEXKSA2MOSFET N-CH 500V 3.7A TO220 |
2288 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.7A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 25.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF530STRRPBFMOSFET N-CH 100V 14A TO263 |
2998 | 1.81 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC86102MOSFET N-CH 100V 7A/20A POWER33 |
2126 | 2.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Ta), 20A (Tc) | 6V, 10V | 24mOhm @ 7A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 965 pF @ 50 V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPSA70R600P7SAKMA1MOSFET N-CH 700V 8.5A TO251-3 |
25800 | 1.08 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 400 V | ±16V | 364 pF @ 400 V | - | 43.1W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STD3NK60Z-1MOSFET N-CH 600V 2.4A IPAK |
3637 | 1.09 |
ДобавитьРасследования |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8 nC @ 10 V | ±30V | 311 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHU5N50D-GE3MOSFET N-CH 500V 5.3A TO251 |
3808 | 1.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STD95N4F3MOSFET N-CH 40V 80A DPAK |
2128 | 2.03 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ III | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TK35A08N1,S4XMOSFET N-CH 80V 35A TO220SIS |
3218 | 1.10 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLR3636TRLPBFMOSFET N-CH 60V 50A DPAK |
3704 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS007N08LCMOSFET N-CH 80V 14A/84A 8PQFN |
2868 | 2.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 14A (Ta), 84A (Tc) | 4.5V, 10V | 6.7mOhm @ 21A, 10V | 2.5V @ 120µA | 46 nC @ 10 V | ±20V | 3100 pF @ 40 V | - | 2.5W (Ta), 92.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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