Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJA02EP-T1_GE3

Таблицы данных

SQJA02EP-T1_GE3

SQJA02EP-T1_GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix

3865 1.53
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 4.8mOhm @ 10A, 10V 3.5V @ 250µA 80 nC @ 10 V ±20V 4700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA76EP-T1_GE3

Таблицы данных

SQJA76EP-T1_GE3

SQJA76EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix

3287 1.53
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.4mOhm @ 10A, 10V 3.5V @ 250µA 100 nC @ 10 V ±20V 5250 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA42EP-T1_GE3

Таблицы данных

SQJA42EP-T1_GE3

SQJA42EP-T1_GE3

MOSFET N-CH 40V 20A PPAK SO-8

Vishay Siliconix

2838 1.53
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Tc) 4.5V, 10V 9.4mOhm @ 6A, 10V 2.3V @ 250µA 33 nC @ 10 V ±20V 1700 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPN22006NH,LQ

Таблицы данных

TPN22006NH,LQ

TPN22006NH,LQ

MOSFET N-CH 60V 9A 8TSON

Toshiba Semiconductor and Storage

2333 0.91
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 6.5V, 10V 22mOhm @ 4.5A, 10V 4V @ 100µA 12 nC @ 10 V ±20V 710 pF @ 30 V - 700mW (Ta), 18W (Tc) 150°C (TJ) Surface Mount
STD30NF06T4

Таблицы данных

STD30NF06T4

STD30NF06T4

MOSFET N-CH 60V 28A DPAK

STMicroelectronics

3148 1.45
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 28mOhm @ 15A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 1750 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS606BDN-T1-GE3

Таблицы данных

SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

MOSFET N-CH 100V 9.4A/35.3A PPAK

Vishay Siliconix

2741 1.56
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 35.3A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOU3N50

Таблицы данных

AOU3N50

AOU3N50

MOSFET N-CH 500V 2.8A TO251-3

Alpha & Omega Semiconductor Inc.

2260 0.71
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.8A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 8 nC @ 10 V ±30V 331 pF @ 25 V - 57W (Tc) -50°C ~ 150°C (TJ) Through Hole
SIJ462DP-T1-GE3

Таблицы данных

SIJ462DP-T1-GE3

SIJ462DP-T1-GE3

MOSFET N-CH 60V 46.5A PPAK SO-8

Vishay Siliconix

3079 1.57
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 46.5A(Tc) - 8mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V - 1400 pF @ 30 V - - - Surface Mount
SIR188DP-T1-RE3

Таблицы данных

SIR188DP-T1-RE3

SIR188DP-T1-RE3

MOSFET N-CH 60V 25.5A/60A PPAK

Vishay Siliconix

2615 1.57
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 25.5A (Ta), 60A (Tc) 7.5V, 10V 3.85mOhm @ 10A, 10V 3.6V @ 250µA 44 nC @ 10 V ±20V 1920 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC025N03MSGATMA1

Таблицы данных

BSC025N03MSGATMA1

BSC025N03MSGATMA1

MOSFET N-CH 30V 100A TDSON-8

Infineon Technologies

3840 1.61
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta). 100A (Tc) 4.5V, 10V 2.5mOhm @ 30A, 10V 2V @ 250µA 98 nC @ 10 V ±20V 7600 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD4302T4G

Таблицы данных

NTD4302T4G

NTD4302T4G

MOSFET N-CH 30V 8.4A/68A DPAK

onsemi

4374 1.69
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta), 68A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2400 pF @ 24 V - 1.04W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7810DN-T1-GE3

Таблицы данных

SI7810DN-T1-GE3

SI7810DN-T1-GE3

MOSFET N-CH 100V 3.4A PPAK1212-8

Vishay Siliconix

3351 1.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 62mOhm @ 5.4A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ4483EY-T1_GE3

Таблицы данных

SQ4483EY-T1_GE3

SQ4483EY-T1_GE3

MOSFET P-CHANNEL 30V 30A 8SOIC

Vishay Siliconix

3238 1.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 4500 pF @ 15 V - 7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RS1L120GNTB

Таблицы данных

RS1L120GNTB

RS1L120GNTB

MOSFET N-CH 60V 12A/36A 8HSOP

Rohm Semiconductor

3566 1.83
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 36A (Tc) 4.5V, 10V 12.7mOhm @ 12A, 10V 2.7V @ 200µA 26 nC @ 10 V ±20V 1330 pF @ 30 V - 3W (Ta) 150°C (TJ) Surface Mount
STD4NK60ZT4

Таблицы данных

STD4NK60ZT4

STD4NK60ZT4

MOSFET N-CH 600V 4A DPAK

STMicroelectronics

2138 1.76
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) Surface Mount
STB16NF06LT4

Таблицы данных

STB16NF06LT4

STB16NF06LT4

MOSFET N-CH 60V 16A D2PAK

STMicroelectronics

2974 1.77
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 5V, 10V 90mOhm @ 8A, 10V 1V @ 250µA (Min) 10 nC @ 4.5 V ±16V 345 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4463BDY-T1-GE3

Таблицы данных

SI4463BDY-T1-GE3

SI4463BDY-T1-GE3

MOSFET P-CH 20V 9.8A 8SO

Vishay Siliconix

2458 1.68
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 2.5V, 10V 11mOhm @ 13.7A, 10V 1.4V @ 250µA 56 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ460AEP-T1_GE3

Таблицы данных

SQJ460AEP-T1_GE3

SQJ460AEP-T1_GE3

MOSFET N-CH 60V 32A PPAK SO-8

Vishay Siliconix

3368 1.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 9.6mOhm @ 18A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 4795 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTFS4C10NWFTAG

Таблицы данных

NVTFS4C10NWFTAG

NVTFS4C10NWFTAG

MOSFET N-CH 30V 15.3A/47A 8WDFN

onsemi

3466 1.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 15.3A (Ta), 47A (Tc) 4.5V, 10V 7.4mOhm @ 30A, 10V 2.2V @ 250µA 19.3 nC @ 10 V ±20V 993 pF @ 15 V - 3W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR310TRLPBF

Таблицы данных

IRFR310TRLPBF

IRFR310TRLPBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix

3227 1.60
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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