Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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FCD5N60TM-WSMOSFET N-CH 600V 4.6A DPAK |
2279 | 1.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.6A (Tc) | 10V | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCD3400N80ZMOSFET N-CH 800V 2A DPAK |
2859 | 1.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIJ150DP-T1-GE3MOSFET N-CH 45V 30.9A/110A PPAK |
3457 | 1.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 30.9A (Ta), 110A (Tc) | 4.5V, 10V | 2.83mOhm @ 15A, 10V | 2.3V @ 250µA | 70 nC @ 10 V | +20V, -16V | 4000 pF @ 20 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DN1509K1-GMOSFET N-CH 90V 200MA SOT23-5 |
3206 | 0.79 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 90 V | 200mA (Tj) | 0V | 6Ohm @ 200mA, 0V | - | - | ±20V | 150 pF @ 25 V | Depletion Mode | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIRC16DP-T1-GE3MOSFET N-CH 25V 60A PPAK SO-8 |
2712 | 1.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 0.96mOhm @ 15A, 10V | 2.4V @ 250µA | 48 nC @ 4.5 V | +20V, -16V | 5150 pF @ 10 V | - | 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR186DP-T1-RE3MOSFET N-CH 60V 60A PPAK SO-8 |
3185 | 1.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37 nC @ 10 V | ±20V | 1710 pF @ 30 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIRA01DP-T1-GE3MOSFET P-CH 30V 26A/60A PPAK SO8 |
3791 | 1.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Ta), 60A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.2V @ 250µA | 112 nC @ 10 V | +16V, -20V | 3490 pF @ 15 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS4685MOSFET P-CH 40V 8.2A 8SOIC |
3402 | 1.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8.2A (Ta) | 4.5V, 10V | 27mOhm @ 8.2A, 10V | 3V @ 250µA | 27 nC @ 5 V | ±20V | 1872 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPC100N04S5L2R6ATMA1MOSFET N-CH 40V 100A 8TDSON-34 |
3634 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 50A, 10V | 2V @ 30µA | 55 nC @ 10 V | ±16V | 2925 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ033NE2LS5ATMA1MOSFET N-CH 25V 18A/40A TSDSON |
3966 | 1.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 18.3 nC @ 10 V | ±16V | 1230 pF @ 12 V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN2R0-25YLDXMOSFET N-CH 25V 100A LFPAK56 |
2890 | 1.33 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 2.09mOhm @ 25A, 10V | 2.2V @ 1mA | 34.1 nC @ 10 V | ±20V | 2485 pF @ 12 V | Schottky Diode (Body) | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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XPN9R614MC,L1XHQMOSFET P-CH 40V 40A 8TSON |
2926 | 1.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.1V @ 500µA | 64 nC @ 10 V | +10V, -20V | 3000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | Surface Mount |
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Таблицы данных |
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IPD80R2K8CEATMA1MOSFET N-CH 800V 1.9A TO252-3 |
2731 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMT6010LSS-13MOSFET N-CH 60V 14A 8SO T&R 2 |
2880 | 1.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2V @ 250µA | 41.3 nC @ 10 V | ±20V | 2090 pF @ 30 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK33S10N1Z,LXHQMOSFET N-CH 100V 33A DPAK |
2206 | 1.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C | Surface Mount |
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Таблицы данных |
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SQJ411EP-T1_GE3MOSFET P-CH 12V 60A PPAK SO-8 |
2392 | 1.39 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 60A (Tc) | 2.5V, 4.5V | 5.8mOhm @ 15A, 4.5V | 1.5V @ 250µA | 150 nC @ 4.5 V | ±8V | 9100 pF @ 6 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ22DN20NS3GATMA1MOSFET N-CH 200V 7A 8TSDSON |
3339 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 225mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6 nC @ 10 V | ±20V | 430 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ068N06NSATMA1MOSFET N-CH 60V 40A TSDSON |
3519 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 6V, 10V | 6.8mOhm @ 20A, 10V | 3.3V @ 20µA | 21 nC @ 10 V | ±20V | 1500 pF @ 30 V | - | 2.1W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y08-40B,115MOSFET N-CH 40V 75A LFPAK56 |
3577 | 1.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 8mOhm @ 25A, 10V | 4V @ 1mA | 36.3 nC @ 10 V | ±20V | 2040 pF @ 25 V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RD3G400GNTLMOSFET N-CH 40V 40A TO252 |
3329 | 1.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 7.5mOhm @ 40A, 10V | 2.5V @ 1mA | 19 nC @ 10 V | ±20V | 1410 pF @ 20 V | - | 26W (Ta) | 150°C (TJ) | Surface Mount |
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