Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ3481EV-T1_GE3

Таблицы данных

SQ3481EV-T1_GE3

SQ3481EV-T1_GE3

MOSFET P-CHANNEL 30V 7.5A 6TSOP

Vishay Siliconix

2827 0.72
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Tc) 4.5V, 10V 43mOhm @ 5.3A, 10V 2.5V @ 250µA 23.5 nC @ 10 V ±20V 870 pF @ 15 V - 4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ3481EV-T1_BE3 SQ3481EV-T1_BE3

SQ3481EV-T1_BE3

MOSFET P-CHANNEL 30V 7.5A 6TSOP

Vishay Siliconix

3515 0.72
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Tc) 4.5V, 10V 43mOhm @ 5.3A, 10V 2.5V @ 250µA 23.5 nC @ 10 V ±20V 870 pF @ 15 V - 4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ3419EV-T1_BE3 SQ3419EV-T1_BE3

SQ3419EV-T1_BE3

MOSFET P-CH 40V 6.9A 6TSOP

Vishay Siliconix

3095 0.72
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.9A (Tc) 4.5V, 10V 58mOhm @ 2.5A, 10V 2.5V @ 250µA 11.3 nC @ 4.5 V ±20V 990 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS7694

Таблицы данных

FDMS7694

FDMS7694

MOSFET N-CH 30V 13.2A/20A 8PQFN

onsemi

2930 0.74
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.2A (Ta), 20A (Tc) 4.5V, 10V 9.5mOhm @ 13.2A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1410 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RQ3E180GNTB

Таблицы данных

RQ3E180GNTB

RQ3E180GNTB

MOSFET N-CH 30V 18A 8HSMT

Rohm Semiconductor

3363 0.75
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.3mOhm @ 18A, 10V 2.5V @ 1mA 22.4 nC @ 10 V ±20V 1520 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
BUK9Y107-80EX

Таблицы данных

BUK9Y107-80EX

BUK9Y107-80EX

MOSFET N-CH 80V 11.8A LFPAK56

Nexperia USA Inc.

2028 0.68
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 11.8A (Tc) 5V 98mOhm @ 5A, 10V 2.1V @ 1mA 6.2 nC @ 5 V ±10V 706 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y153-100E,115

Таблицы данных

BUK9Y153-100E,115

BUK9Y153-100E,115

MOSFET N-CH 100V 9.4A LFPAK56

Nexperia USA Inc.

2049 0.68
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 5V 146mOhm @ 2A, 10V 2.1V @ 1mA 6.8 nC @ 5 V ±10V 716 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MVGSF1N03LT1G

Таблицы данных

MVGSF1N03LT1G

MVGSF1N03LT1G

MOSFET N-CH 30V 1.6A SOT23

onsemi

2160 0.75
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 100mOhm @ 1.2A, 10V 2.4V @ 250µA - ±20V 140 pF @ 5 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA14DP-T1-GE3

Таблицы данных

SIRA14DP-T1-GE3

SIRA14DP-T1-GE3

MOSFET N-CH 30V 58A PPAK SO-8

Vishay Siliconix

2653 0.72
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 5.1mOhm @ 10A, 10V 2.2V @ 250µA 29 nC @ 10 V +20V, -16V 1450 pF @ 15 V - 3.6W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9M53-60EX

Таблицы данных

BUK9M53-60EX

BUK9M53-60EX

MOSFET N-CH 60V 17A LFPAK33

Nexperia USA Inc.

2787 0.68
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 5V 46mOhm @ 5A, 10V 2.1V @ 1mA 6 nC @ 5 V ±10V 683 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSL211SPH6327XTSA1

Таблицы данных

BSL211SPH6327XTSA1

BSL211SPH6327XTSA1

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies

3975 0.75
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 10 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISP75DP06LMXTSA1 ISP75DP06LMXTSA1

ISP75DP06LMXTSA1

MOSFET P-CH 60V 1.1A SOT223-4

Infineon Technologies

3512 0.69
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 4.5V, 10V 750mOhm @ 1.1A, 10V 2V @ 77µA 4 nC @ 10 V ±20V 120 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3419AEEV-T1_GE3

Таблицы данных

SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3

MOSFET P-CHANNEL 40V 6.9A 6TSOP

Vishay Siliconix

3638 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.9A (Tc) 4.5V, 10V 61mOhm @ 2.5A, 10V 2.5V @ 250µA 12.5 nC @ 4.5 V ±12V 975 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ3426AEEV-T1_GE3

Таблицы данных

SQ3426AEEV-T1_GE3

SQ3426AEEV-T1_GE3

MOSFET N-CH 60V 7A 6TSOP

Vishay Siliconix

3655 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 700 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3476DV-T1-GE3

Таблицы данных

SI3476DV-T1-GE3

SI3476DV-T1-GE3

MOSFET N-CH 80V 4.6A 6TSOP

Vishay Siliconix

3359 0.58
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 4.6A (Tc) 4.5V, 10V 93mOhm @ 3.5A, 10V 3V @ 250µA 7.5 nC @ 10 V ±20V 195 pF @ 40 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7M42-60EX

Таблицы данных

BUK7M42-60EX

BUK7M42-60EX

MOSFET N-CH 60V 20A LFPAK33

Nexperia USA Inc.

3830 0.69
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 42mOhm @ 5A, 10V 4V @ 1mA 9 nC @ 10 V ±20V 508 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIA433EDJ-T1-GE3

Таблицы данных

SIA433EDJ-T1-GE3

SIA433EDJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix

3074 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.8V, 4.5V 18mOhm @ 7.6A, 4.5V 1.2V @ 250µA 75 nC @ 8 V ±12V - - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA416DJ-T1-GE3

Таблицы данных

SIA416DJ-T1-GE3

SIA416DJ-T1-GE3

MOSFET N-CH 100V 11.3A PPAK

Vishay Siliconix

3880 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11.3A (Tc) 4.5V, 10V 83mOhm @ 3.2A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 295 pF @ 50 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3473CDV-T1-E3

Таблицы данных

SI3473CDV-T1-E3

SI3473CDV-T1-E3

MOSFET P-CH 12V 8A 6TSOP

Vishay Siliconix

2178 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 22mOhm @ 8.1A, 4.5V 1V @ 250µA 65 nC @ 8 V ±8V 2010 pF @ 6 V - 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH108DN-T1-GE3

Таблицы данных

SISH108DN-T1-GE3

SISH108DN-T1-GE3

MOSFET N-CH 20V 14A PPAK1212-8SH

Vishay Siliconix

3249 0.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen II Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.9mOhm @ 22A, 10V 2V @ 250µA 30 nC @ 4.5 V ±16V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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